参数资料
型号: LT1115CSW#TR
厂商: Linear Technology
文件页数: 14/16页
文件大小: 0K
描述: IC OPAMP AUDIO MONO AB 16SOIC
标准包装: 1,000
放大器类型: 音频
电路数: 1
转换速率: 15 V/µs
增益带宽积: 70MHz
电流 - 输入偏压: 50nA
电压 - 输入偏移: 50µV
电流 - 电源: 8.5mA
电压 - 电源,单路/双路(±): ±4 V ~ 20 V
工作温度: 0°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 16-SOIC(0.295",7.50mm 宽)
供应商设备封装: 16-SO
包装: 带卷 (TR)
7
LT1115
1115fa
FPO
Small-Signal Transient Response
Maximum Output vs Frequency
(Power Bandwidth*)
FREQUENCY (Hz)
10k
0
PEAK-TO-PEAK
OUTPUT
VOLTAGE
(V)
20
25
30
100k
1M
10M
15
10
5
VS = ±18V
TA = 25°C
RL = 2k
*POWER BANDWIDTH
fP = POWER BANDWIDTH
SLEW RATE
πE
OP
fP =
EP-P = PEAK-TO-PEAK AMPLIFIER
OUTPUT VOLTAGE
LT1115 TPC29
Closed-Loop Output Impedance
10
OUTPUT
IMPEDANCE
(
)
1
10
100
100k
0.1
0.01
0.001
100
1k
10k
1M
IO = 1mA
VS = ±18V
TA = 25°C
FREQUENCY (Hz)
AV = 5
LT1115 TPC30
AV = 1000
CCIF Testing
Note: The CCIF twin-tone intermodulation test inputs two closely
spaced equal amplitude tones to the device under test (DUT). The
analyzer then measures the intermodulation distortion (IMD)
produced in the DUT by measuring the difference tone equal to the
spacing between the tones.
The amplitude of the lMD test input is in sinewave peak equivalent
terms. As an example, selecting an amplitude of 1.000V will result in
the complex IMD signal having the same 2.828V peak-to-peak
amplitude that a 1.000V sinewave has. Clipping in a DUT will thus
occur at the same input amplitude for THD + N and IMD modes.
The LT1115 is a very high performance op amp, but
not necessarily one which is optimized for universal
application. Because of very low voltage noise and the
resulting high gain-bandwidth product, the device is most
applicable to relatively high gain applications. Thus, while
the LT1115 will provide notably superior performance to
the 5534 in most applications, the device may require
circuit modifications to be used at very low noise gains.
The part is not generally applicable for unity gain followers
or inverters. In general, it should always be used with good
low impedance bypass capacitors on the supplies, low
impedance feedback values, and minimal capacitive load-
ing. Ground plane construction is recommended, as is a
compact layout.
20mV/DIVISION
AV = –1,
RS = Rf = 2k
Cf = 30pF
CL = 80pF
0.2s/DIVISION
TYPICAL PERFOR A CE CHARACTERISTICS
UW
Voltage Noise vs Current Noise
The LT1115’s less than 1nV/√Hz voltage noise matches
that of theLT1028 and is three times better than the lowest
voltage noise heretofore available (on the LT1007/1037).
A necessary condition for such low voltage noise is
operating the input transistors at nearly 1mA of
collector currents, because voltage noise is inversely
proportional to the square root of the collector current.
Current noise, however, is directly proportional to the
square root of the collector current. Consequently, the
LT1115’s current noise is significantly higher than on
most monolithic op amps.
APPLICATIO S I FOR ATIO
WU
UU
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