参数资料
型号: IDT70V3579S6BC
厂商: IDT, Integrated Device Technology Inc
文件页数: 16/17页
文件大小: 0K
描述: IC SRAM 1.125MBIT 6NS 256BGA
标准包装: 6
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,同步
存储容量: 1.125M(32K x 36)
速度: 6ns
接口: 并联
电源电压: 3.15 V ~ 3.45 V
工作温度: 0°C ~ 70°C
封装/外壳: 256-LBGA
供应商设备封装: 256-CABGA(17x17)
包装: 托盘
其它名称: 70V3579S6BC
800-1395
IDT70V3579S
High-Speed 32K x 36 Dual-Port Synchronous Pipelined Static RAM
Ordering Information
Industrial and Commercial Temperature Ranges
XXXXX
Device
Type
A
Power
99
Speed
A
Package
A
A
Process/
Temperature
Range
Blank
I (1)
G (2)
BF
DR
BC
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
Green
208-pin fpBGA (BF-208)
208-pin PQFP (DR-208)
256-pin BGA (BC-256)
4
5
6
S
(133MHz) Commercial Only
(100MHz) Commercial & Industrial
(83MHz) Commercial Only
Standard Power
Speed in
nanoseconds
70V3579 1Mbit (32K x 36-Bit) 3.3V Synchronous Dual-Port RAM
4830 drw 15
NOTE:
1 . Contact your local sales office for Industrial temp range in other speeds, packages and powers.
2. Green parts available. For specific speeds, packages and powers contact your local sales office.
Datasheet Document History
12/9/98:
3/12/99:
4/28/99:
6/8/99:
Initial Public Release
Added fpBGA package
Fixed typo on page 10
Changed drawing format
Page 2 Changed package body dimensions
6/15/99:
8/4/99:
Page 5
Page 6
Deleted note 6 for Table II
Improved power numbers
10/4/99:
10/19/99:
11/12/99:
4/10/00:
Upgraded speed to 133MHz, added 2.5V I/O capability
Page 4 Corrected I/O numbers in Truth Table I
Replaced IDT logo
Added new BGA package, added full 2.5V interface capability
1/12/01:
Page 6
Updated Truth Table II
Increated storage temperature parameter
Clarified T A Parameter
Page 8 DC Electrical parameters–changed wording from "open" to "disabled"
Removed note 7 on DC Electrical Characteristics table
Removed Preliminary status
16
6.42
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