参数资料
型号: IDT70V3579S6BC
厂商: IDT, Integrated Device Technology Inc
文件页数: 1/17页
文件大小: 0K
描述: IC SRAM 1.125MBIT 6NS 256BGA
标准包装: 6
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,同步
存储容量: 1.125M(32K x 36)
速度: 6ns
接口: 并联
电源电压: 3.15 V ~ 3.45 V
工作温度: 0°C ~ 70°C
封装/外壳: 256-LBGA
供应商设备封装: 256-CABGA(17x17)
包装: 托盘
其它名称: 70V3579S6BC
800-1395
Features:
HIGH-SPEED 3.3V 32K x 36
SYNCHRONOUS PIPELINED
DUAL-PORT STATIC RAM
WITH 3.3V OR 2.5V INTERFACE
IDT70V3579S
True Dual-Port memory cells which allow simultaneous
access of the same memory location
– Data input, address, byte enable and control registers
– Self-timed write allows fast cycle time
High-speed clock to data access
– Commercial: 4.2/5/6ns (max.)
– Industrial: 5ns (max)
Pipelined output mode
Counter enable and reset features
Dual chip enables allow for depth expansion without
additional logic
Full synchronous operation on both ports
– 7.5ns cycle time, 133MHz operation (9.6 Gbps bandwidth)
– Fast 4.2ns clock to data out
– 1.8ns setup to clock and 0.7ns hold on all control, data, and
address inputs @ 133MHz
Separate byte controls for multiplexed bus and bus
matching compatibility
LVTTL- compatible, single 3.3V (±150mV) power supply for
core
LVTTL compatible, selectable 3.3V (±150mV)/2.5V (±125mV)
power supply for I/Os and control signals on each port
Industrial temperature range (-40°C to +85°C) is
available for selected speeds
Available in a 208-pin Plastic Quad Flatpack (PQFP) and
208-pin fine pitch Ball Grid Array, and 256-pin Ball Grid
Array
Green parts available, see ordering information
Functional Block Diagram
R/ W L
BE 3L
BE 2L
BE 1L
BE 0L
BE 3R
BE 2R
BE 1R
BE 0R
R/ W R
B
W
B
W
B B
W W
B
W
B B
W W
B
W
CE 0L
0
L
1
L
2 3
L L
3
R
2 1
R R
0
R
CE 0R
CE 1L
OE L
Dout0-8_L
Dout9-17_L
Dout18-26_L
Dout27-35_L
Dout0-8_R
Dout9-17_R
Dout18-26_R
Dout27-35_R
CE 1R
OE R
32K x 36
MEMORY
ARRAY
I/O 0L - I/O 35L
CLK L
Din_L
Din_R
I/O 0R - I/O 35R
CLK R
,
A 14L
A 0L
CNTRST L
ADS L
Counter/
Address
Reg.
ADDR_L
ADDR_R
Counter/
Address
Reg.
A 14R
A 0R
CNTRST R
ADS R
CNTEN L
?2008 Integrated Device Technology, Inc.
1
CNTEN R
4830 tbl 01
OCTOBER 2008
DSC 4830/16
相关PDF资料
PDF描述
IDT70V3389S5PRFI8 IC SRAM 1.125MBIT 5NS 128TQFP
IDT7133LA90G IC SRAM 32KBIT 90NS 68PGA
KMPC875CZT66 IC MPU POWERQUICC 66MHZ 256PBGA
IDT7133LA70G IC SRAM 32KBIT 70NS 68PGA
KMPC875CZT133 IC MPU POWERQUICC 133MHZ 256PBGA
相关代理商/技术参数
参数描述
IDT70V3579S6BC8 功能描述:IC SRAM 1.125MBIT 6NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V3579S6BCI 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1.125MBIT 6NS 256CABGA
IDT70V3579S6BCI8 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1.125MBIT 6NS 256CABGA
IDT70V3579S6BF 功能描述:IC SRAM 1.125MBIT 6NS 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70V3579S6BF8 功能描述:IC SRAM 1.125MBIT 6NS 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8