参数资料
型号: IDT7009L20PF
厂商: IDT, Integrated Device Technology Inc
文件页数: 1/17页
文件大小: 0K
描述: IC SRAM 1MBIT 20NS 100TQFP
标准包装: 6
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 1M (128K x 8)
速度: 20ns
接口: 并联
电源电压: 4.5 V ~ 5.5 V
工作温度: 0°C ~ 70°C
封装/外壳: 100-LQFP
供应商设备封装: 100-TQFP(14x14)
包装: 托盘
其它名称: 7009L20PF
Features
HIGH-SPEED
128K x 8 DUAL-PORT
STATIC RAM
IDT7009L
True Dual-Ported memory cells which allow simultaneous
than one device
reads of the same memory location
M/ S = V IH for BUSY output flag on Master,
High-speed access
M/ S = V IL for BUSY input on Slave
– Commercial: 15/20ns (max.)
– Industrial: 20ns (max.)
Interrupt Flag
On-chip port arbitration logic
Low-power operation
– IDT7009L
Active: 1W (typ.)
Standby: 1mW (typ.)
Dual chip enables allow for depth expansion without
external logic
IDT7009 easily expands data bus width to 16 bits or
more using the Master/Slave select when cascading more
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
TTL-compatible, single 5V (±10%) power supply
Available in a 100-pin TQFP
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Green parts available, see ordering information
Functional Block Diagram
R/ W L
CE 0L
CE 1L
OE L
R/ W R
CE 0R
CE 1R
OE R
BUSY L
I/O 0-7L
(1,2)
I/O
Control
I/O
Control
I/O 0-7R
BUSY R
(1,2)
A 16L
A 0L
Address
Decoder
128Kx8
MEMORY
ARRAY
7009
Address
Decoder
A 16R
A 0R
17
17
INT L
M/ S
INT R
SEM L
(2)
CE 0L
CE 1L
OE L
R/ W L
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
(1)
CE 0R
CE 1R
OE R
R/ W R
SEM R
(2)
4839 drw 01
NOTES:
1. BUSY is an input as a Slave (M/ S = V IL ) and an output when it is a Master (M/ S = V IH ).
2. BUSY and INT are non-tri-state totem-pole outputs (push-pull).
?2008 Integrated Device Technology, Inc.
1
NOVEMBER 2008
DSC-4839/5
相关PDF资料
PDF描述
KMPC859TZP133A IC MPU POWERQUICC 133MHZ 357PBGA
IDT70V07S55G IC SRAM 256KBIT 55NS 68PGA
KMPC859TVR133A IC MPU POWERQUICC 133MHZ 357PBGA
IDT7024L35G IC SRAM 64KBIT 35NS 84PGA
IDT7024L25G IC SRAM 64KBIT 25NS 84PGA
相关代理商/技术参数
参数描述
IDT7009L20PF8 功能描述:IC SRAM 1MBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT7009L20PFG 功能描述:IC SRAM 1024KBIT 20NS 100TQFP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT7009L20PFG8 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1MBIT 20NS 100TQFP
IDT7009L20PFGI 功能描述:IC SRAM 1MBIT 20NS 100TQFP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT7009L20PFGI8 功能描述:IC SRAM 1MBIT 20NS 100TQFP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8