参数资料
| 型号： | HFA1113IBZ96 |
| 厂商： | Intersil |
| 文件页数： | 8/16页 |
| 文件大小： | 0K |
| 描述： | IC BUFFER 850MHZ 8-SOIC |
| 标准包装： | 2,500 |
| 放大器类型： | 缓冲器 |
| 电路数： | 1 |
| 转换速率： | 2400 V/µs |
| -3db带宽： | 850MHz |
| 电流 - 输入偏压： | 25µA |
| 电压 - 输入偏移： | 8000µV |
| 电流 - 电源： | 21mA |
| 电流 - 输出 / 通道： | 60mA |
| 电压 - 电源，单路/双路(±)： | 9 V ~ 11 V，±4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
16
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN1342.6
July 11, 2005
Die Characteristics
DIE DIMENSIONS:
63 mils x 44 mils x 19 mils
1600
m x 1130m x 483m
METALLIZATION:
Type: Metal 1: AICu(2%)/TiW
Thickness: Metal 1: 8k
±0.4k
Type: Metal 2: AICu(2%)
Thickness: Metal 2: 16k
±0.8k
PASSIVATION:
Type: Nitride
Thickness: 4k
±0.5k
TRANSISTOR COUNT:
52
SUBSTRATE POTENTIAL (POWERED UP):
Floating (Recommend Connection to V-)
Metallization Mask Layout
HFA1113
NC
V-
VL
NC
OUT
+IN
-IN
VH
V+
HFA1113
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相关代理商/技术参数 |
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