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参数资料
| 型号： | FQU11P06TU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 9.4A IPAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | I-PAK, I2PAK Pkg |
| 标准包装： | 70 |
| 系列： | QFET™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 185 毫欧 @ 4.7A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 17nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 550pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
| 产品目录页面： | 1608 (CN2011-ZH PDF) |
Package Marking and Ordering Information
Part Number
FQD11P06 TM
FQU11P06TU
Top Mark
FQD11P06
FQ U 11P06
Package
D-PAK
I -PAK
Packing Method
Tape and Reel
Tube
Reel Size
330 mm
N/A
Tape Width
16 mm
N/A
Quantity
2500 units
70 units
Electrical Characteristics
T C = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = -250 μ A
I D = -250 μ A, Referenced to 25°C
V DS = -60 V, V GS = 0 V
V DS = -48 V, T C = 125°C
V GS = -25 V, V DS = 0 V
V GS = 25 V, V DS = 0 V
-60
--
--
--
--
--
--
-0.07
--
--
--
--
--
--
-1
-10
-100
100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th) Gate Threshold Voltage
V DS = V GS , I D = -250 μ A
-2.0
--
-4.0
V
R DS(on)
g FS
Static Drain-Source
On-Resistance
Forward Transconductance
V GS = -10 V, I D = -4.7 A
V DS = -30 V, I D = -4.7 A
--
--
0.15
4.9
0.185
--
?
S
Dynamic Characteristics
C iss Input Capacitance
C oss Output Capacitance
C rss Reverse Transfer Capacitance
V DS = -25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
420
195
45
550
250
60
pF
pF
pF
Switching Characteristics
t d(on) Turn-On Delay Time
t r Turn-On Rise Time
t d(off) Turn-Off Delay Time
t f Turn-Off Fall Time
V DD = -30 V, I D = -5.7 A,
R G = 25 ?
(Note 4 )
--
--
--
--
6.5
40
15
45
25
90
40
100
ns
ns
ns
ns
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DS = -48 V, I D = -11.4 A,
V GS = -10 V
(Note 4 )
--
--
--
13
2.0
6.3
17
--
--
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S Maximum Continuous Drain-Source Diode Forward Current
--
--
-9.4
A
I SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
-37.6
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = -9.4 A
V GS = 0 V, I S = -11.4 A,
dI F / dt = 100 A/ μ s
--
--
--
--
83
0.26
-4.0
--
--
V
ns
μ C
Notes:
1. Repetitive r ating : p ulse - width limited by maximum junction temperature .
2. L = 2.1 mH, I AS = -9.4 A, V DD = -25 V, R G = 25 ?, s tarting T J = 25°C .
3. I SD ≤ -11.4 A, di/dt ≤ 300 A/ μ s, V DD ≤ BV DSS, s tarting T J = 25°C .
4. Essentially independent of operating temperature .
?2000 Fairchild Semiconductor Corporation
FQD11P06 / FQU11P06 Rev. C 2
2
www.fairchildsemi.com
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