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参数资料
| 型号： | FDB33N25TM |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 250V 33A D2PAK |
| 标准包装： | 1 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 250V |
| 电流 - 连续漏极(Id) @ 25° C： | 33A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 94 毫欧 @ 16.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 48nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2135pF @ 25V |
| 功率 - 最大： | 235W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FDB33N25TMDKR |
November 2013
FDB33N25
N-Channel UniFET TM MOSFET
250 V, 33 A, 94 m Ω
Features
? R DS(on) = 94 m Ω (Max.) @ V GS = 10 V, I D = 16.5 A
? Low Gate Charge (Typ. 36.8 nC)
? Low C rss (Typ. 39 pF)
? 100% Avalanche Tested
Applications
Description
UniFET TM MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche en-
ergy strength. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
? PDP TV
? Lighting
? Uninterruptible Power Supply
? AC-DC Power Supply
D
D
G
S
D 2 -PAK
G
Absolute Maximum Ratings
T C = 25°C unless otherwise noted.
S
Symbol
V DSS
Drain-Source Voltage
Parameter
FDB33N25
250
Unit
V
I D
Drain Current
- Continuous (T C = 25 ° C)
- Continuous (T C = 100 ° C)
33
20.4
A
A
I DM
V GSS
Drain Current
Gate-Source voltage
- Pulsed
(Note 1)
132
± 30
A
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
918
33
23.5
4.5
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 ° C)
- Derate Above 25 ° C
235
1.89
W
W/ ° C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
° C
° C
Thermal Characteristics
Symbol
R θ JC
R θ JA *
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient (1 in 2 Pad of 2-oz Copper), Max.
Thermal Resistance, Junction-to-Ambient (Minimum Pad of 2-oz Copper), Max.
FDB33N25
0.53
40
62.5
Unit
° C/W
?2006 Fairchild Semiconductor Corporation
FDB33N25 Rev. C1
1
www.fairchildsemi.com
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