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参数资料
| 型号： | DS1217M-2-25 |
| 厂商： | Maxim Integrated |
| 文件页数： | 7/8页 |
| 文件大小： | 0K |
| 描述： | RAM READ/WRITE NV 2MEG CARTRIDGE |
| 标准包装： | 1 |
| 存储器类型： | NVRAM |
| 存储容量： | 256KB |
| 速度： | 250ns |
| 封装/外壳： | 30-卡边缘盒式模块 |
DS1217M Nonvolatile Read/Write Cartridge
inputs A8 through A11) must be executed to guarantee that pattern entry starts with the first set of 3 bits. Each set
of address inputs is entered into the DS1217M by executing read cycles. The first 11 cycles must match the exact
bit pattern as shown in Table 2. The last five cycles must match the exact bit pattern for addresses A9, A10, and
A11. However, address line 8 defines which of the 16 banks is to be enabled, or all banks are deselected, as per
Table 3. Switching from one bank to another occurs as the last of the 16 read cycles is completed. A single bank is
selected at any one time. A selected bank will remain active until a new bank is selected, all banks are deselected,
or until power is lost. (See the DS1222 BankSwitch Chip data sheet for more detail.)
Remote Connection through a Ribbon Cable
Existing systems that contain 28-pin bytewide sockets can be retrofitted using a 28-pin DIP plug. The DIP plug,
AMP Part Number 746616-2, can be inserted into the 28-pin site after the memory is removed. Connection to the
cartridge is accomplished via a 28-pin cable connected to a 30-contact card edge connector, AMP Part Number
499188-4. The 28-pin ribbon cable must be right justified, such that positions A1 and B1 are left disconnected. For
applications where the cartridge is installed or removed with power applied, both ground contacts (A1 and B1) on
the card edge connector should be grounded to further enhance data integrity. Access time push-out may occur as
the distance between the cartridge and the driving circuitry is increased.
Table 1. Cartridge Numbering
PART
DS1217M 1/2-25
DS1217M 1-25
DS1217M 2-25
DS1217M 3-25
DS1217M 4-25
DENSITY
64kB x 8
128kB x 8
256kB x 8
384kB x 8
512kB x 8
NO. OF BANKS
2
4
8
12
16
Table 2. Address Input Pattern
ADDRESS
BIT SEQUENCE
INPUTS
A8
A9
A10
A11
0
1
0
1
0
1
0
1
0
1
2
1
0
1
0
3
0
1
0
1
4
0
1
0
1
5
0
1
0
1
6
1
0
1
0
7
1
0
1
0
8
0
1
0
1
9
1
0
1
0
10
0
1
0
1
11
X
0
1
0
12
X
0
1
0
13
X
0
1
0
14
X
1
0
1
15
X
1
0
1
X = See Table 3
Table 3. Bank Select Table
BANK
A8 BIT SEQUENCE
BANK
A8 BIT SEQUENCE
SELECTED
BANKS OFF
BANK 0
BANK 1
BANK 2
BANK 3
BANK 4
BANK 5
BANK 6
11
0
X
1
1
1
1
1
1
12
X
0
0
0
0
0
0
0
13
X
0
0
0
0
1
1
1
14
X
0
0
1
1
0
0
1
15
X
0
1
0
1
0
1
0
BANK 7
BANK 8
BANK 9
BANK 10
BANK 11
BANK 12
BANK 13
BANK 14
BANK 15
1
1
1
1
1
1
1
1
1
0
1
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
1
0
0
1
1
0
0
1
1
1
0
1
0
1
0
1
0
1
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| DS1217M-1-25 | RAM READ/WRITE NV 1MEG CARTRIDGE |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1217M2-25 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Nonvolatile Read/Write Cartridge |
| DS1217M-3-25 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1217M3-25 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Nonvolatile Read/Write Cartridge |
| DS1217M-4-25 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1217M4-25 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Nonvolatile Read/Write Cartridge |
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