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参数资料
| 型号： | DS1217M-2-25 |
| 厂商： | Maxim Integrated |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | RAM READ/WRITE NV 2MEG CARTRIDGE |
| 标准包装： | 1 |
| 存储器类型： | NVRAM |
| 存储容量： | 256KB |
| 速度： | 250ns |
| 封装/外壳： | 30-卡边缘盒式模块 |
DS1217M Nonvolatile Read/Write Cartridge
AC ELECTRICAL CHARACTERISTICS
(V CC = 5V ±10%, T A = 0°C to +70°C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Read Cycle Time
Access Time
OE to Output Valid
CE to Output Valid
t RC
t ACC
t OE
t CO
250
250
125
210
ns
ns
ns
ns
OE or CE to Output Active
Output High-Z from
Deselection
Output Hold from Address
Change
Read Recovery Time
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High-Z from WE
Output Active from WE
Data Setup Time
Data Hold Time from WE
t COE
t OD
t OH
t RR
t WC
t WP
t AW
t WR
t ODW
t OEW
t DS
t DH
(Note 1)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(Note 3)
5
5
40
250
170
0
20
5
100
20
125
100
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note 1:
Note 2:
Note 3:
These parameters are sampled with a 5pF load and are not 100% tested.
t WP is specified as the logical AND of CE and WE t WP is measured from the latter of CE or WE going low to the earlier of CE or WE
going high.
t DH , t DS are measured form the earlier of CE or WE going high.
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相关代理商/技术参数 |
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|---|---|
| DS1217M2-25 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Nonvolatile Read/Write Cartridge |
| DS1217M-3-25 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1217M3-25 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Nonvolatile Read/Write Cartridge |
| DS1217M-4-25 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1217M4-25 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Nonvolatile Read/Write Cartridge |
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