参数资料
型号: CM200RX-12A
厂商: Powerex Inc
文件页数: 4/6页
文件大小: 0K
描述: IGBT MOD 7PAC 600V 200A NX SER
标准包装: 1
系列: IGBTMOD™
配置: 三相反相器,带制动器
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 2.1V @ 15V,200A
电流 - 集电极 (Ic)(最大): 200A
电流 - 集电极截止(最大): 1mA
Vce 时的输入电容 (Cies): 27nF @ 10V
功率 - 最大: 735W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: 模块
供应商设备封装: 模块
配用: BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT
BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT
BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT
BG2A-NF-ND - KIT DEV BOARD FOR IGBT
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM200RX-12A
Six IGBTMOD? + Brake NX-Series Module
200 Amperes/600 Volts
Electrical and Mechanical Characteristics, T j = 25°C unless otherwise specified
Brake Sector
Characteristics
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Repetitive Reverse Current*
Forward Voltage Drop *
Symbol
I CES
V GE(th)
I GES
V CE(sat)
C ies
C oes
C res
Q G
I RRM
V F
Test Conditions
V CE = V CES , V GE = 0V
I C = 10mA
V GE = V GES , V CE = 0V
I C = 100A, V GE = 15V, T j = 25°C
I C = 100A, V GE = 15V, T j = 125°C
I C = 100A, V GE = 15V, Chip
V CE = 10V, V GE = 0V
V CC = 300V, I C = 100A, V GE = 15V
V R = V RRM
I F = 100A, T j = 25°C
I F = 100A, T j = 125°C
I F = 100A, Chip
Min.
5
Typ.
6
1.7
1.9
1.6
300
2.0
1.95
1.9
Max.
1.0
7
0.5
2.1
13.3
1.4
0.45
1.0
2.8
Units
mA
Volts
μA
Volts
Volts
Volts
nF
nF
nF
nC
mA
Volts
Volts
Volts
Thermal and Mechanical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case**
Thermal Resistance, Junction to Case**
Contact Thermal Resistance**
Internal Gate Resistance
External Gate Resistance
Symbol
R th(j-c) Q
R th(j-c) D
R th(j-f)
R Gint
R G
Test Conditions
Per IGBT
Per FWDi
Thermal Grease Applied
T C = 25°C
Min.
6
Typ.
0.015
0
Max.
0.31
0.59
62
Units
°C/W
°C/W
°C/W
Ω
Ω
NTC Thermistor Sector, T j = 25°C unless otherwise specified
Characteristics
Zero Power Resistance
Deviation of Resistance
B Constant
Power Dissipation
Symbol
R
? R/R
B (25/50)
P 25
Test Conditions
T C = 25°C
T C = 100°C, R 100 = 493 Ω
B = (InR 1 – InR 2 ) / (1/T 1 – 1/T 2 )***
T C = 25°C
Min.
4.85
–7.3
Typ.
5.00
3375
Max.
5.15
+7.8
10
Units
k Ω
%
K
mW
*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**T C , T f measured point is just under the chips.
***R1: Resistance at Absolute Temperature T 1 (K), R 2 : Resistance at Absolute Temperature T 2 (K), T(K) = t(°C) + 273.15
4
Rev. 11/08
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