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参数资料
| 型号： | CM200RX-12A |
| 厂商： | Powerex Inc |
| 文件页数： | 3/6页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD 7PAC 600V 200A NX SER |
| 标准包装： | 1 |
| 系列： | IGBTMOD™ |
| 配置： | 三相反相器，带制动器 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.1V @ 15V，200A |
| 电流 - 集电极 (Ic)（最大）： | 200A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 27nF @ 10V |
| 功率 - 最大： | 735W |
| 输入： | 标准 |
| NTC 热敏电阻： | 是 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
| 配用： | BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT BG2A-NF-ND - KIT DEV BOARD FOR IGBT |
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM200RX-12A
Six IGBTMOD? + Brake NX-Series Module
200 Amperes/600 Volts
Electrical and Mechanical Characteristics, T j = 25°C unless otherwise specified
Inverter Sector
Characteristics
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Symbol
I CES
V GE(th)
I GES
V CE(sat)
C ies
C oes
C res
Q G
Test Conditions
V CE = V CES , V GE = 0V
I C = 20mA, V CE = 10V
V GE = V GES , V CE = 0V
I C = 200A, V GE = 15V, T j = 25°C
I C = 200A, V GE = 15V, T j = 125°C
I C = 200A, V GE = 15V, Chip
V CE = 10V, V GE = 0V
V CC = 300V, I C = 200A, V GE = 15V
Min.
—
5
—
—
—
—
—
—
—
—
Typ.
—
6
—
1.7
1.9
1.6
—
—
—
530
Max.
1.0
7
0.5
2.1
—
—
27.0
2.7
0.8
—
Units
mA
Volts
μA
Volts
Volts
Volts
nF
nF
nF
nC
Inductive
Turn-on Delay Time
t d(on)
—
—
120
ns
Load
Switch
Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
t r
t d(off)
t f
V CC = 300V, I C = 200A,
V GE = ± 15V,
R G = 5.6 Ω , I E = 150A,
—
—
—
—
—
—
150
350
600
ns
ns
ns
Reverse Recovery Time*
Reverse Recovery Charge*
Emitter-Collector Voltage*
t rr
Qrr
V EC
Inductive Load Switching Operation
I E = 200A, V GE = 0V, T j = 25°C
I E = 200A, V GE = 0V, T j = 125°C
I E = 200A, V GE = 0V, Chip
—
—
—
—
—
—
5.0
2.0
1.95
1.9
200
—
2.8
—
—
ns
μC
Volts
Volts
Volts
Thermal and Mechanical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case**
Thermal Resistance, Junction to Case**
Contact Thermal Resistance**
Internal Gate Resistance
External Gate Resistance
Symbol
R th(j-c) Q
R th(j-c) D
R th(c-f)
R Gint
R G
Test Conditions
Per IGBT
Per FWDi
Thermal Grease Applied
T C = 25°C
Min.
—
—
—
—
3.0
Typ.
—
—
0.015
0
—
Max.
0.17
0.33
—
—
30
Units
°C/W
°C/W
°C/W
Ω
Ω
*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**T C , T f measured point is just under the chips.
CHIP LOCATION (TOP VIEW)
Chip Location (Top View)
0
IGBT
FWDi
NTC Thermistor
34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
0
17.4
24.4
28.0
35.0
35
36
U P
U P
U N
U N
V P
V P
V N
V N
W P
W P
W N
W N
Br
Th
Br
12
11
10
9
8
7
6
5
18.3
26.8
39.7
1
2
3
4
Dimensions in mm (Tolerance: ± 1mm)
Rev. 11/08
3
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