参数资料
型号: CM1400DU-24NF
厂商: Powerex Inc
文件页数: 3/4页
文件大小: 0K
描述: IGBT MOD DUAL 1200V 1400A MEGA
标准包装: 1
系列: IGBTMOD™
配置: 半桥
电压 - 集电极发射极击穿(最大): 1200V
Vge, Ic时的最大Vce(开): 2.5V @ 15V,1400A
电流 - 集电极 (Ic)(最大): 1400A
电流 - 集电极截止(最大): 1mA
Vce 时的输入电容 (Cies): 220nF @ 10V
功率 - 最大: 3900W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: 模块
供应商设备封装: 模块
配用: BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT
BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT
BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT
BG2A-NF-ND - KIT DEV BOARD FOR IGBT
其它名称: 835-1007
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1400DU-24NF
Mega Power Dual IGBTMOD?
1400 Amperes/1200 Volts
Thermal and Mechanical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to
Case *7
R th(j-c) Q
IGBT Part (1/2 Module)
0.032
K/W
Thermal Resistance, Junction to Case *7
R th(j-c) D
FWDi Part (1/2 Module)
0.053
K/W
Contact Thermal
Resistance *6
R th(c-f)
Case to Heatsink,
0.016
K/W
Thermal Grease Applied (1/2 Module)
Thermal Resistance, Junction to Case *5
R th(j-c') Q
Per IGBT Part,
0.014
K/W
T C Reference Point Under the Chips
Thermal Resistance, Junction to Case *5
R th(j-c') D
Per FWDi Part,
0.023
K/W
T C Reference Point Under the Chips
External Gate Resistance
R G
0.22
2.2
?
*5 Case temperature (T C ') measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips.
*6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m ? K)].
*7 Case temperature (T C ) measured point is shown in the device dtawing.
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
2800
2400
2000
15
V GE = 20V
13
T j = 25°C
12
2800
2400
2000
V CE = 10V
T j = 25°C
T j = 125°C
5
4
V GE = 15V
T j = 25°C
T j = 125°C
1600
1200
11
1600
1200
3
2
800
400
8
10
9
800
400
1
0
0
1
2
3
4
5
6
7
8
9 10
0
0
4
8
12
16
20
0
0
400 600 1200 1600 2000 2400 2800
CAPACITANCE VS. VCE
COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE, V GE , (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
COLLECTOR-CURRENT, I C , (AMPERES)
(TYPICAL)
10
T j = 25°C
10 4
10 3
V GE = 0V
8
6
10 2
C ies
4
I C = 1400A
I C = 560A
I C = 2800A
10 3
10 1
C oes
2
T j = 25°C
T j = 125°C
C res
0
0
4
8
12
16
20
10 2
0.5 1.0
1.5
2.0
2.5 3.0
3.5
4.0
10 0
10 -1
10 0
10 1
10 2
GATE-EMITTER VOLTAGE, V GE , (VOLTS)
4/12 Rev. 3
EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS)
3
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