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| 型号： | CM1400DU-24NF |
| 厂商： | Powerex Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD DUAL 1200V 1400A MEGA |
| 标准包装： | 1 |
| 系列： | IGBTMOD™ |
| 配置： | 半桥 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.5V @ 15V，1400A |
| 电流 - 集电极 (Ic)（最大）： | 1400A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 220nF @ 10V |
| 功率 - 最大： | 3900W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
| 配用： | BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT BG2A-NF-ND - KIT DEV BOARD FOR IGBT |
| 其它名称： | 835-1007 |
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1400DU-24NF
Mega Power Dual IGBTMOD?
1400 Amperes/1200 Volts
Maximum Ratings, T j = 25°C unless otherwise specified
Ratings
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Symbol
V CES
V GES
Ratings
1200
±20
Units
Volts
Volts
Collector Current DC (T C' =
94°C) *5
I C
1400
Amperes
Peak Collector Current (Pulse) *2
Emitter Current (T C = 25°C)
Peak Emitter Current (Pulse) *2
Maximum Collector Dissipation (T C = 25°C)
Junction Temperature
I CM
I E *1
I EM *1
P C *3
T j
2800
1400
2800
3900
-40 to 150
Amperes
Amperes
Amperes
Watts
°C
Storage
Temperature *4
T stg
-40 to 125
°C
Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 min.)
Mounting Torque, M6 Mounting Screws
Mounting Torque, M6 Main Terminal Screw
Weight (Typical)
V iso
–
–
–
2500
40
40
1400
Volts
in-lb
in-lb
Grams
Electrical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Symbol
I CES
V GE(th)
I GES
Test Conditions
V CE = V CES , V GE = 0V
I C = 140mA, V CE = 10V
±V GE = V GES , V CE = 0V
Min.
–
6
–
Typ.
–
7
–
Max.
1
8
1.5
Units
mA
Volts
μA
Collector-Emitter Saturation Voltage
V CE(sat)
I C = 1400A, V GE = 15V, T j =
25°C *4
–
1.8
2.5
Volts
(Without Lead Resistance)
Module Lead Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Emitter-Collector Voltage
(Chip)
R (lead)
C ies
C oes
C res
Q G
t d(on)
t r
t d(off)
t f
t rr *1
Q rr *1
V EC *1
I C = 1400A, V GE = 15V, T j = 125°C *4
I C = 1400A, Terminal-Chip
V CE = 10V, V GE = 0V
V CC = 600V, I C = 1400A, V GE = 15V
V CC = 600V, I C = 1400A,
V GE = ±15V,
R G = 0.22?, Inductive Load,
I E = 1400A
I E = 1400A, V GE = 0V
–
–
–
–
–
–
–
–
–
–
–
–
–
2.0
0.286
–
–
–
7200
–
–
–
–
–
90
–
–
–
220
25
4.7
–
800
300
1000
300
700
–
3.2
Volts
m?
nF
nF
nF
nC
ns
ns
ns
ns
ns
μC
Volts
(Without Lead Resistance)
(Chip)
2
*1
*2
*3
*4
*5
*8
Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating.
Junction temperature (T j ) should not increase beyond maximum junction temperature (T j(max) ) rating.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
Case temperature (T C ') measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips.
The operation temperature is restrained by the permission temperature of female connector.
4/12 Rev.3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CM1400DUC-24NF | 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE 1400A 1200V 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.2KV, 1.4KA, Transistor Polarity:Dual N Channel, DC Collector Current:1.4kA, Collector Emitter Voltage Vces:1.2kV, Operating Temperature Min:-40C, Operating Temperature Max:150C 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE NF-SERIES DUAL |
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