参数资料
型号: CM100DY-34A
厂商: Powerex Inc
文件页数: 2/4页
文件大小: 0K
描述: IGBT MOD DUAL 1700V 100A A SER
标准包装: 2
系列: IGBTMOD™
配置: 半桥
电压 - 集电极发射极击穿(最大): 1700V
Vge, Ic时的最大Vce(开): 2.8V @ 15V,100A
电流 - 集电极 (Ic)(最大): 100A
电流 - 集电极截止(最大): 1mA
Vce 时的输入电容 (Cies): 24.7nF @ 10V
功率 - 最大: 960W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: 模块
供应商设备封装: 模块
配用: BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT
BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT
BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT
BG2A-NF-ND - KIT DEV BOARD FOR IGBT
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM100DY-34A
Dual IGBTMOD? A-Series Module
100 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
IE*
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (DC, TC = 108°C)* 4
Peak Collector Current (Pulse Repetition)* 2
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)* 2, * 4
Emitter Current (TC = 25°C)
Peak Emitter Current (Pulse Repetition)* 2
Mounting Torque, M5 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.)
Symbol
Tj
Tstg
VCES
VGES
IC
ICM
PC
1
IEM* 1
VISO
CM100DY-34A
–40 to 150
–40 to 125
1700
±20
100
200
960
100
200
30
40
310
3500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Watts
Amperes
Amperes
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage
Symbol
ICES
IGES
VGE(th)
VCE(sat)
QG
VEC* 1
Test Conditions
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 10mA, VCE = 10V
IC = 100A, VGE = 15V, Tj = 25°C* 3
IC = 100A, VGE = 15V, Tj = 125°C* 3
VCC = 1000V, IC = 100A, VGE = 15V
IE = 100A, VGE = 0V* 3
Min.
5.5
Typ.
7.0
2.2
2.45
670
Max.
1.0
2.0
8.5
2.8
3.0
Units
mA
μA
Volts
Volts
Volts
nC
Volts
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Cies
Coes
Cres
Test Conditions
VCE = 10V, VGE = 0V
Min.
Typ.
Max.
24.7
2.8
0.53
Units
nf
nf
nf
Inductive
Turn-on Delay Time
td(on)
200
ns
Load
Switch
Time
Rise Time
Turn-off Delay Time
Fall Time
tr
td(off)
tf
VCC = 1000V, IC = 100A,
VGE1 = VGE2 = 15V, RG = 4.8 Ω ,
Inductive Load
150
550
350
ns
ns
ns
trr*
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
1
Qrr* 1
Switching Operation,
IE = 100A
10
300
ns
μC
2
*1
*2
*3
*4
Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips.
01/10 Rev. 1
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