参数资料
型号: A8437ECGLT
厂商: Allegro Microsystems Inc
文件页数: 11/22页
文件大小: 0K
描述: IC PHOTOFLASH CAP CHARGER WLCSP
标准包装: 24,000
应用: 照相机闪光灯电容器充电器,Xenon
电源电压: 2.3 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 12-UFBGA,WLCSP
供应商设备封装: 12-WLCSP
包装: 带卷 (TR)
A8437
Mobile Phone Xenon Photoflash Capacitor Charger
with IGBT Driver
by selecting the value of an external resistor RSET,
connected from the ISET pin to GND, which deter-
mines the ISET bias current, and therefore the switch-
ing current limit, I SWlim .
To the first order approximation, I SWlim is related to
I SET and R SET according to the following equations:
where:
R SET(INT) is the internal resistance of the I SET pin
(1 k Ω typical),
R GND(INT) is the internal resistance of the bonding
wire for the GND pin (27 m Ω typical), and
I SWlim = I SET × K = V SET / R SET × K ,
where K = 28000 when battery voltage is 3.6 V.
(3)
K = (K ′ + V IN × K ″ ), with K ′ = 24350 and K ″ ≈
1040 at T A = 25°C. Then,
In real applications, the actual switching current
I SWlim = I SET × K + V BAT / L P × t D ,
(5)
limit is affected by input battery voltage, and also the
transformer primary inductance, Lp. If necessary, the
following expressions can be used to determine I SWlim
more accurately:
I SET = V SET / ( R SET + R SET(INT) – K × R GND(INT) ), (4)
where t D is the delay in SW turn-off (0.1 μ s typical).
The chart at the bottom of the page can be used to
determine the relationship between R SET and I SWlim at
various battery voltages.
Peak Current Limit versus ISET Resistance
V IN = V BAT , XFM Lp = 8 μ H, T A =25°C
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
V IN = 5.5 V
V IN = 4.5 V
V IN = 3.6 V
V IN = 3.0 V
V IN = 2.3 V
25
30
35
40
45
50
55
60
65
70
75
80
85
90
R SET (k Ω )
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
10
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