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参数资料
| 型号： | 70V3319S166BFG |
| 厂商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分类： | SRAM |
| 英文描述： | 256K X 18 DUAL-PORT SRAM, 3.6 ns, CBGA208 |
| 封装： | 15 X 15 MM X 1.4 MM, 0.80 MM PITCH, GREEN, FPBGA-208 |
| 文件页数： | 22/23页 |
| 文件大小： | 222K |
| 代理商： | 70V3319S166BFG |
6.42
IDT70V3319/99S
High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM
Industrial and Commercial Temperature Ranges
8
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VDD = 3.3V ± 150mV)
NOTE:
1. At VDD < 2.0V leakages are undefined.
2. VDDQ is selectable (3.3V/2.5V) via OPT pins. Refer to p.5 for details.
Symbol
Parameter
Test Conditions
70V3319/99S
Unit
Min.
Max.
|ILI|
Input Leakage Current(1)
VDDQ = Max., VIN = 0V to VDDQ
___
10
A
|ILO|
Output Leakage Currentt
(1)
CE0 = VIH or CE1 = VIL, VOUT = 0V to VDDQ
___
10
A
VOL (3.3V)
Output Low Voltage(2)
IOL = +4mA, VDDQ = Min.
___
0.4
V
VOH (3.3V)
Output High Voltage(2)
IOH = -4mA, VDDQ = Min.
2.4
___
V
VOL (2.5V)
Output Low Voltage
(2)
IOL = +2mA, VDDQ = Min.
___
0.4
V
VOH (2.5V)
Output High Voltage
(2)
IOH = -2mA, VDDQ = Min.
2.0
___
V
5623 tbl 08
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. 3dV references the interpolated capacitance when the input and output switch
from 0V to 3V or from 3V to 0V.
3. COUT also references CI/O.
Capacitance(1)(TA = +25°C, F = 1.0MHZ)
Symbol
Parameter
Conditions(2)
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
8
pF
COUT(3)
Output Capacitance
VOUT = 3dV
10.5
pF
5623 tbl 07
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相关代理商/技术参数 |
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|---|---|
| 70V3319S166BFG8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Dual 3.3V 4.5M-Bit 256K x 18 12ns/3.6ns 208-Pin CABGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 3.3V 4MBIT 256KX18 12NS/3.6NS 208FPBGA - Tape and Reel 制造商:Integrated Device Technology Inc 功能描述:256Kx18 STD-PWR 3.3V SYNC DUAL-PORT RAM |
| 70V3319S166PRF | 功能描述:静态随机存取存储器 256Kx18 STD-PWR 3.3V SYNC DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| 70V3319S166PRF8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Dual 3.3V 4.5M-Bit 256K x 18 12ns/3.6ns 128-Pin TQFP T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 3.3V 4MBIT 256KX18 12NS/3.6NS 128TQFP - Tape and Reel 制造商:Integrated Device Technology Inc 功能描述:256Kx18 STD-PWR 3.3V SYNC DUAL-PORT RAM |
| 70V3319S166PRFG | 功能描述:静态随机存取存储器 256Kx18 STD-PWR 3.3V SYNC DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| 70V3319S166PRFG8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Dual 3.3V 4.5M-Bit 256K x 18 12ns/3.6ns 128-Pin TQFP T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 3.3V 4MBIT 256KX18 12NS/3.6NS 128TQFP - Tape and Reel 制造商:Integrated Device Technology Inc 功能描述:256Kx18 STD-PWR 3.3V SYNC DUAL-PORT RAM |
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