参数资料
型号: 5LN01M-TL-H
厂商: ON Semiconductor
文件页数: 1/6页
文件大小: 0K
描述: MOSFET N-CH 50V 100MA SC59
标准包装: 3,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 50V
电流 - 连续漏极(Id) @ 25° C: 100mA
开态Rds(最大)@ Id, Vgs @ 25° C: 7.8 欧姆 @ 50mA,4V
闸电荷(Qg) @ Vgs: 1.57nC @ 10V
输入电容 (Ciss) @ Vds: 6.6pF @ 10V
功率 - 最大: 150mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: 3-MCP
包装: 带卷 (TR)
Ordering number : EN6137C
5LN01M
N-Channel Small Signal MOSFET
50V, 0.1A, 7.8 Ω , Single MCP
Features
http://onsemi.com
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Low ON-resistance
Ultrahigh-speed switching
1.5V drive
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
50
±10
0.1
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
IDP
PD
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
0.4
0.15
150
--55 to +150
A
W
°C
°C
This product is designed to “ESD immunity < 200V * ”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Ordering & Package Information
unit : mm (typ)
7023A-010
Device
5LN01M-TL-E
Package
MCP
SC-70, SOT-323
Shipping
3,000pcs./reel
memo
Pb-Free
2.0
3
0.15
5LN01M-TL-E
5LN01M-TL-H
5LN01M-TL-H
MCP
SC-70, SOT-323
3,000pcs./reel
Pb-Free
and
Halogen Free
0 to 0.08
Packing Type: TL
Marking
1
0.65
2
0.3
LOT No.
YB
1 : Gate
TL
LOT No.
2 : Source
3 : Drain
Electrical Connection
3
MCP
1
2
Semiconductor Components Industries, LLC, 2013
July, 2013
71713 TKIM TC-00002956/71112 TKIM/31506PE MSIM TB-00002111/ No.6137-1/6
31000 TS (KOTO) TA-2048
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