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参数资料
| 型号： | 2SK3163 |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 8/12页 |
| 文件大小： | 67K |
| 代理商： | 2SK3163 |
2SK3163
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
——V
I
D = 10 mA, VGS = 0
Gate to source leak current
I
GSS
——
±0.1
AV
GS = ±20 V, VDS = 0
Zero gate voltege drain
current
I
DSS
——
10
AV
DS = 60 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.5
V
I
D = 1 mA, VDS = 10 V
Note
1
Static drain to source on state R
DS(on)
—
6.0
7.5
m
I
D = 40 A, VGS = 10 V
Note 1
resistance
—
8.0
12
m
I
D = 40 A, VGS = 4 V
Note 1
Forward transfer admittance
|y
fs|50
80
—
S
I
D = 40 A, VDS = 10 V
Note 1
Input capacitance
Ciss
—
7100
—
pF
V
DS = 10 V
Output capacitance
Coss
—
1000
—
pF
V
GS = 0
Reverse transfer capacitance Crss
—
280
—
pF
f = 1 MHz
Total gate charge
Qg
—
125
—
nc
V
DD = 25 V
Gate to source charge
Qgs
—
25
—
nc
V
GS = 10 V
Gate to drain charge
Qgd
—
25
—
nc
I
D = 75 A
Turn-on delay time
t
d(on)
—
60
—
ns
V
GS = 10 V, ID = 40 A
Rise time
t
r
—
300
—
ns
R
L = 0.75
Turn-off delay time
t
d(off)
—
520
—
ns
Fall time
t
f
—
330
—
ns
Body–drain diode forward
voltage
V
DF
—
1.05
—
V
I
F = 75 A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
90
—
ns
I
F = 75 A, VGS = 0
diF/ dt = 50 A/
s
Note:
1. Pulse test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3163(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3163-E | 制造商:Renesas Electronics Corporation 功能描述:POWER MODULE - Bulk 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 75A 3-Pin(3+Tab) TO-3P 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,75A,6.0m ohm,TO-3P |
| 2SK317 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 8A I(D) | SOT-119VAR |
| 2SK3174A | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET UHF Power Amplifier |
| 2SK3175A | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET UHF Power Amplifier |
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