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参数资料
| 型号： | 2SK3163 |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 7/12页 |
| 文件大小： | 67K |
| 代理商： | 2SK3163 |
2SK3163
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
60
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
75
A
Drain peak current
I
D(pulse)
Note 1
300
A
Body-drain diode reverse drain current
I
DR
75
A
Avalanche current
I
AP
Note 3
50
A
Avalanche energy
E
AR
Note 3
214
mJ
Channel dissipation
Pch
Note 2
110
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3163(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3163-E | 制造商:Renesas Electronics Corporation 功能描述:POWER MODULE - Bulk 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 75A 3-Pin(3+Tab) TO-3P 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,75A,6.0m ohm,TO-3P |
| 2SK317 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 8A I(D) | SOT-119VAR |
| 2SK3174A | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET UHF Power Amplifier |
| 2SK3175A | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET UHF Power Amplifier |
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