参数资料
型号: W9725G6IB-25
厂商: Winbond Electronics
文件页数: 2/84页
文件大小: 0K
描述: IC DDR2-800 SDRAM 256MB 84-WBGA
标准包装: 209
格式 - 存储器: RAM
存储器类型: DDR2 SDRAM
存储容量: 256M(16Mx16)
速度: 2.5ns
接口: 并联
电源电压: 1.7 V ~ 1.9 V
工作温度: 0°C ~ 85°C
封装/外壳: 84-TFBGA
供应商设备封装: 84-WBGA(8x12.5)
包装: 托盘
W9725G6IB
7.4.2
7.4.3
7.4.4
7.4.5
Burst mode operation.......................................................................................................24
Burst read mode operation...............................................................................................25
Burst write mode operation ..............................................................................................25
Write data mask ...............................................................................................................26
7.5
7.6
Burst Interrupt .....................................................................................................................................26
Precharge operation............................................................................................................................27
7.6.1
7.6.2
Burst read operation followed by precharge.....................................................................27
Burst write operation followed by precharge ....................................................................27
7.7
Auto-precharge operation ...................................................................................................................27
7.7.1
7.7.2
Burst read with Auto-precharge........................................................................................28
Burst write with Auto-precharge .......................................................................................28
7.8
7.9
Refresh Operation...............................................................................................................................29
Power Down Mode..............................................................................................................................29
7.9.1
7.9.2
Power Down Entry ...........................................................................................................30
Power Down Exit..............................................................................................................30
8.
9.
7.10
8.1
8.2
8.3
8.4
8.5
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
Input clock frequency change during precharge power down .............................................................30
OPERATION MODE ...........................................................................................................................31
Command Truth Table ........................................................................................................................31
Clock Enable (CKE) Truth Table for Synchronous Transitions............................................................32
Data Mask (DM) Truth Table...............................................................................................................32
Function Truth Table ...........................................................................................................................33
Simplified Stated Diagram...................................................................................................................36
ELECTRICAL CHARACTERISTICS ...................................................................................................37
Absolute Maximum Ratings.................................................................................................................37
Operating Temperature Condition.......................................................................................................37
Recommended DC Operating Conditions ...........................................................................................37
ODT DC Electrical Characteristics ......................................................................................................38
Input DC Logic Level...........................................................................................................................38
Input AC Logic Level ...........................................................................................................................38
Capacitance ........................................................................................................................................39
Leakage and Output Buffer Characteristics ........................................................................................39
DC Characteristics ..............................................................................................................................40
9.9.1
DC Characteristics for -25/-3 speed grades .....................................................................40
9.10
9.11
9.12
9.13
9.14
IDD Measurement Test Parameters....................................................................................................42
AC Characteristics ..............................................................................................................................43
AC Input Test Conditions ....................................................................................................................63
Differential Input/Output AC Logic Levels ...........................................................................................63
AC Overshoot / Undershoot Specification ...........................................................................................64
9.14.1
9.14.2
AC Overshoot / Undershoot Specification for Address and Control Pins: ........................64
AC Overshoot / Undershoot Specification for Clock, Data, Strobe and Mask pins:..........64
10.
10.1
10.2
TIMING WAVEFORMS .......................................................................................................................65
Command Input Timing.......................................................................................................................65
Timing of the CLK Signals...................................................................................................................65
Publication Release Date: Oct. 23, 2009
-2-
Revision A04
相关PDF资料
PDF描述
W9725G6JB25I IC DDR2 SDRAM 256MBIT 84WBGA
W9725G6KB-25I IC DDR2 SDRAM 256MBIT 84WBGA
W972GG6JB-3I IC DDR2 SDRAM 2GBITS 84WBGA
W9751G6IB-25 IC DDR2-800 SDRAM 512MB 84-WBGA
W9751G6KB-25 IC DDR2 SDRAM 512MBIT 84WBGA
相关代理商/技术参数
参数描述
W9725G6JB 制造商:WINBOND 制造商全称:Winbond 功能描述:4M ? 4 BANKS ? 16 BIT DDR2 SDRAM
W9725G6JB-25 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 256M-Bit 16Mx16 1.8V 84-Pin WBGA 制造商:Winbond Electronics 功能描述:512MB DDRII
W9725G6JB25I 功能描述:IC DDR2 SDRAM 256MBIT 84WBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN(2x3) 包装:管件 产品目录页面:1445 (CN2011-ZH PDF)
W9725G6KB-18 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY
W9725G6KB-25 功能描述:IC DDR2 SDRAM 256MBIT 84WBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G(256M x 16) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6