参数资料
型号: W949D2CBJX5E
厂商: Winbond Electronics
文件页数: 51/60页
文件大小: 0K
描述: IC LPDDR SDRAM 512MBIT 90VFBGA
标准包装: 240
格式 - 存储器: RAM
存储器类型: 移动 LPDDR SDRAM
存储容量: 512M(16M x 32)
速度: 200MHz
接口: 并联
电源电压: 1.7 V ~ 1.95 V
工作温度: -25°C ~ 85°C
封装/外壳: 90-TFBGA
供应商设备封装: 90-VFBGA(8x13)
包装: 托盘
W949D6CB / W949D2CB
512Mb Mobile LPDDR
8.5 AC Timings
[Recommended Operating Conditions: Notes 1-9]
-5
-6
- 75
PARAMETER
SYMBOL
UNIT
NOTES
MIN
MAX
MIN
MAX
MIN
MAX
DQ output access time
from CK/ CK
CL=3
CL=2
tAC
2.0
2.0
5.0
6.5
2.0
2.0
5.0
6.5
2.0
2.0
6.0
6.5
ns
DQS output access time from CK/
CK
Clock high-level width
Clock low-level width
Clock half period
CL=3
CL=2
tDQSCK
tCH
tCL
tHP
2.0
2.0
0.45
0.45
Min
(tCL, tCH)
5.0
6.5
0.55
0.55
2.0
2.0
0.45
0.45
Min
(tCL, tCH)
5.0
6.5
0.55
0.55
2.0
2.0
0.45
0.45
Min
(tCL, tCH)
6.0
6.5
0.55
0.55
ns
tCK
tCK
ns
10,11
CL=3
5
6
7.5
ns
12
Clock cycle time
tCK
CL=2
12
12
12
ns
12
DQ and DM input setup
time
fast
slow
fast
tDS
0.48
0.58
0.48
0.6
0.7
0.6
0.8
0.9
0.8
ns
ns
ns
13,14,15
13,14,16
13,14,15
DQ and DM input hold time
tDH
slow
0.58
0.7
0.9
ns
13,14,16
DQ and DM input pulse width
tDIPW
1.6
1.6
1.8
ns
17
Address and control input
setup time
Address and control input
hold time
fast
slow
fast
slow
tIS
tIH
0.9
1.1
0.9
1.1
1.1
1.3
1.1
1.3
1.3
1.5
1.3
1.5
ns
ns
ns
ns
15,18
16,18
15,18
16,18
Address and control input pulse width
DQ & DQS low-impedance time from
CK/ CK
tIPW
tLZ
2.3
1.0
2.6
1.0
2.6
1.0
ns
ns
17
19
DQ & DQS high-impedance
time from CK/ CK
CL=3
CL=2
tHZ
5.0
6.5
5.0
6.5
6.0
6.5
ns
19
DQS-DQ skew
DQ/DQS output hold time from DQS
Data hold skew factor
tDQSQ
tQH
tQHS
tHP-tQHS
0.4
0.5
tHP-tQHS
0.5
065
tHP-tQHS
0.6
0.75
ns
ns
ns
20
11
11
Write command to 1st DQS latching
transition
DQS input high-level width
DQS input low-level width
tDQSS
tDQSH
tDQSL
0.75
0.4
0.4
1.25
0.6
0.6
0.75
0.4
0.4
1.25
0.6
0.6
0.75
0.4
0.4
1.25
0.6
0.6
tCK
tCK
tCK
DQS falling edge to CK setup time
DQS falling edge hold time from CK
MODE REGISTER SET command
tDSS
tDSH
tMRD
0.2
0.2
2
0.2
0.2
2
0.2
0.2
2
tCK
tCK
tCK
Publication Release Date: Sep, 21, 2011
- 51 -
Revision A01-007
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