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参数资料
| 型号： | VO3150A-X007T |
| 厂商： | Vishay Semiconductors |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER IGBT/MOSFET 0.5A 8-SMD |
| 产品培训模块： | Opto IGBT / MOSFET Driver |
| 产品目录绘图： | VO3 Series 8-SMD Circuit |
| 特色产品： | Optically Isolated IGBT/MOSFET Driver |
| 标准包装： | 1 |
| 电压 - 隔离： | 5300Vrms |
| 通道数： | 1，单向 |
| 电流 - 输出 / 通道： | 500mA |
| 传输延迟高 - 低 @ 如果： | 400ns @ 16mA |
| 电流 - DC 正向(If)： | 16mA |
| 输入类型： | DC |
| 输出类型： | 栅极驱动器 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD（300 密耳） |
| 供应商设备封装： | 8-SMD |
| 包装： | 标准包装 |
| 产品目录页面： | 2756 (CN2011-ZH PDF) |
| 其它名称： | 751-1476-6 |
VO3150A
THERMAL CHARACTERISTICS
0.5 A Output Current IGBT and
MOSFET Driver
Vishay Semiconductors
PARAMETER
LED power dissipation
SYMBOL
P diss
VALUE
45
UNIT
mW
Output power dissipation
Total power dissipation
P diss
P tot
250
285
mW
mW
T A
θ CA
Maximum LED junction temperature
Maximum output die junction temperature
T jmax.
T jmax.
125
125
°C
°C
θ DC
T C
Package
θ EC
Thermal resistance, junction emitter to board
Thermal resistance, junction emitter to case
Thermal resistance, junction detector to board
θ JEB
θ JEC
θ JDB
169
192
82
°C/W
°C/W
°C/W
T JD
θ DB
θ DE
T B
θ EB
T JE
Thermal resistance, junction detector to case
θ JDC
80
°C/W
Thermal resistance, junction emitter to
junction detector
θ JED
200
°C/W
θ BA
19996
Thermal resistance, case to ambient
θ CA
2645
°C/W
T A
Note
? The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the
temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of
PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal
Characteristics of Optocouplers application note.
ELECTRICAL CHARACTERISTICS
(1)
PARAMETER
High level output current
Low level output current
High level output voltage
Low level output voltage
High level supply current
Low level supply current
Threshold input current low to high
TEST CONDITION
I F = 16 mA, R g = 10 Ω , C g = 20 nF,
V CC = 15 V, V EE = 0 V
I F = 0 mA, R g = 10 Ω , C g = 20 nF,
V CC = 15 V, V EE = 0 V
I O = - 100 mA
I O = 100 mA
Output open, I F = 7 mA to 16 mA
Output open, V F = - 3 V to + 0.8 V
I O = 0 mA, V O > 5 V
SYMBOL
I OH (3)
I OL (3)
V OH (4)
V OL
I CCH
I CCL
I FLH
MIN.
0.5
0.5
V CC - 4
TYP.
V CC - 2.1
0.2
2.1
MAX.
0.5
2.5
2.5
5
UNIT
A
A
V
V
mA
mA
mA
Threshold input voltage high to low
V FHL
0.8
V
Input forward voltage
I F = 10 mA
V F
1
1.3
1.6
V
Temperature coefficient of forward
voltage
Input reverse breakdown voltage
Input capacitance
I F = 10 mA
I R = 10 μA
f = 1 MHz, V F = 0 V
Δ V F / Δ T A
BV Ρ
C IN
5
- 1.4
60
mV/°C
V
pF
UVLO threshold
V O ≥ 5 V
I F = 10 mA
V UVLO+
V UVLO-
11
9.5
12.6
10.7
13.5
12
V
V
UVLO hysteresis
UVLO HYS
1.9
V
Notes
(1) Minimum and maximum values were tested over recommended operating conditions (T
amb = - 40 °C to 110 °C, I F(ON) = 7 mA to 16 mA,
V F(OFF) = - 3 V to 0.8 V, V CC = 15 V to 32 V, V EE = ground) unless otherwise specified. Typical values are characteristics of the device and are
the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. All typical values
were measured at T amb = 25 °C and with V CC - V EE = 32 V.
(2) Maximum pulse width = 50 μs, maximum duty cycle = 0.5 %.
(3) Maximum pulse width = 10 μs, maximum duty cycle = 0.2 %. This value is intended to allow for component tolerances for designs with
I O peak minimum = 0.5 A.
(4) In this test V
OH is measured with a dc load current. When driving capacitive loads V OH will approach V CC as I OH approaches zero A. Maximum
pulse width = 1 ms, maximum duty cycle = 20 %.
Document Number: 81808
Rev. 1.1, 14-Jan-10
For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
3
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