参数资料
型号: US2881ESO
厂商: Melexis Technologies NV
文件页数: 25/46页
文件大小: 498K
描述: IC LATCH CMOS H-S SOT-23
标准包装: 1
传感范围: 4.5mT 跳闸,-4.5mT 释放
类型: 双极卡锁
电源电压: 3.5 V ~ 24 V
电流 - 电源: 5mA
电流 - 输出(最大): 50mA
输出类型: 数字式,开漏极
工作温度: -40°C ~ 85°C
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23
包装: 剪切带 (CT)
其它名称: US2881ESOCT
3-33
Graph 8, Slide-by with Magnet A
Change in Activation Distance With TC
There is a 17% difference in flux density over the entire temperature range compared with the fixed-tem-
perature case in Graph 7. Note that because of the negative temperature coefficient of the magnet, the neg-
ative temperature (-40
0
C) adds flux density to the magnet, while the positive temperature (85
0
C) reduces
flux density.
Graph 9 shows how the air gap tolerance and temperature coefficient add together and cause tolerance
buildup in the Hall Effect system.
Graph 9, Slide-by Method with Magnet A
Change in Activation distance with Air Gap & TC
The two plotted lines in Graph 9 show the minimum and maximum possible cases when temperature and
air gap are considered. The overall difference in distance between min. BRP and max. BOP is slightly
larger because of the sum of tolerances being considered. This design example has shown the tolerance
buildup of air gap, benefits of slope, Hall IC BOP to BRP variations and magnet Tc. We have not con-
sidered the variation of initial flux density, which you must obtain from a magnet supplier.
Section 3 - Applications
-400
-300
-200
-100
0
100
200
300
400
-1
-0.75
-0.5    -0.25
0
0.25
0.5
0.75
1
Distance (mm)
Temp = 25
o
C
Temp = 85
o
C
Temp -40
o
C
-400
-300
-200
-100
0
100
200
300
400
-1.5
-1
-0.5
0
0.5
1
1.5
Distance (mm)
Air Gap = 1.5mm @ -40
o
C
Air Gap = 2.5mm @ 80
o
C
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