参数资料
| 型号： | TISP6NTP2CDR-S |
| 厂商： | Bourns Inc. |
| 文件页数： | 3/7页 |
| 文件大小： | 0K |
| 描述： | SURGE PROT THYRIST 155VDUAL SLIC |
| 产品培训模块： | ESD Protection Products |
| 产品变化通告： | Wire Color Change May 2008 |
| 产品目录绘图： | TISP6NTP2(A,C)DR Schematic |
| 标准包装： | 1 |
| 电压 - 工作： | -100V |
| 电压 - 箝位： | -112V |
| 技术： | 混合技术 |
| 电路数： | 4 |
| 应用： | SLIC |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 标准包装 |
| 产品目录页面： | 2379 (CN2011-ZH PDF) |
| 其它名称： | TISP6NTP2CDR-SDKR |
TISP6NTP2C High Voltage Ringing SLIC Protector
Electrical Characteristics, 0 ° C ≤ TJ ≤ 70 ° C (Unless Otherwise Noted)
Parameter
Test Conditions
Min
Typ
Max
Unit
I D
V (BO)
Off-state current
Ramp breakover
voltage
V D = V DRM , V GK = 0
UL 497B, dv/dt ≤ ± 100 V/ μ s, di/dt = ± 10 A/ μ s,
V GG = -100 V, Maximum ramp value = ± 10 A
T J = 25 ° C
T J = 25 ° C
-5
-50
-112
μ A
μ A
V
V (BO)
V GK(BO)
V F
Impulse breakover
voltage
Gate-cathode impulse
breakover voltage
Forward voltage
2/10 μ s, I TM = -27 A, di/dt = -27 A/ μ s, R S = 50 ? , V GG = -100 V,
(see Note 3)
2/10 μ s, I TM = -27 A, di/dt = -27 A/ μ s, R S = 50 ? , V GG = -100 V,
(see Note 3)
I F = 5 A, t w = 200 μ s
-115
15
3
V
V
V
V FRM
V FRM
I H
I GKS
I GT
V GT
C KA
Ramp peak forward
recovery voltage
Impulse peak forward
recovery voltage
Holding current
Gate reverse current
Gate trigger current
Gate-cathode trigger
voltage
Cathode-anode off-
state capacitance
UL 497B, dv/dt ≤ ± 100 V/ μ s, di/dt = ± 10 A/ μ s,
Maximum ramp value = ± 10 A
2/10 μ s, I TM = -27 A, di/dt = -27 A/ μ s, R S = 50 ? ,
(see Note 3)
I T = -1 A, di/dt = 1A/ms, V GG = -100 V
V GG = V GK = V GKRM , V KA = 0
I T = -3 A, t p(g) ≥ 20 μ s, V GG = -100 V
I T = -3 A, t p(g) ≥ 20 μ s, V GG = -100 V
f = 1 MHz, V d = 1 V, I G = 0, (see Note 4)
T J = 25 ° C
T J = 25 ° C
T J = 25 ° C
V D = -3 V
V D = -48 V
-150
5
12
-5
-50
5
6
2.5
100
50
V
V
mA
μ A
μ A
mA
mA
V
pF
pF
NOTES: 3. GR-1089-CORE intra-building 2/10, 1.5 kV conditions with 20 MHz bandwidth. The diode forward recovery and the thyristor gate
impulse breakover (overshoot) are not strongly dependent of the SLIC supply voltage value (V GG ).
4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
Thermal Characteristics
R θ JA
Parameter
Junction to free air thermal resistance
Test Conditions
T A = 70 ° C, EIA/JESD51-3 PCB,
EIA/JESD51-2 environment, P tot = 0.52 W
Min
Typ
Max
160
Unit
° C/W
MARCH 2002 – REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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| TISP70151D-S | 功能描述:SCR Triple Element RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
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