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参数资料
| 型号： | SMPC7.5A-M3/86A |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 3/5页 |
| 文件大小： | 0K |
| 描述： | TVS 1.5KW UNIDIR 7.5V 5% SMPC |
| 标准包装： | 1,500 |
| 系列： | TransZorb®, eSMP™ |
| 电压 - 反向隔离（标准值）： | 7.5V |
| 电压 - 击穿： | 8.33V |
| 功率（瓦特）： | 1500W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-277，3-PowerDFN |
| 供应商设备封装： | TO-277A |
| 包装： | 带卷 (TR) |
SMPC5.0A thru SMPC36A
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES
(T A = 25 °C unless otherwise noted)
Vishay General Semiconductor
100
10
N on-repetiti v e P u lse
Wa v eform sho w n in Fig. 3
T A = 25 °C
150
100
t r = 10 μ s
Peak Val u e
I PPM
Half Val u e - I PP
T J = 25 °C
P u lse Width (t d )
is defined as the Point
w here the Peak C u rrent
decays to 50 % of I PPM
I PPM
2
1
50
10/1000 μ s Wa v eform
as defined b y R.E.A.
0.31 x 0.31" ( 8 .0 x 8 .0 mm)
Copper Pad Areas
t d
0.1
0.1
1
10
100
1000
10 000
0
0
1.0
2.0
3.0
4.0
100
t d - P u lse Width ( μ s)
Fig. 1 - Peak Pulse Power Rating Curve
10 000
t - Time (ms)
Fig. 3 - Pulse Waveform
V R meas u red
at Zero Bias
75
50
25
1000
100
V R meas u red at Stand-off
Voltage V WM
T J = 25 °C
f = 1.0 MHz
V sig = 50 mV p-p
0
10
0
25
50
75
100
125
150
175
200
1
10
100
T J - Initial Temperat u re
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Re v erse Voltage (V)
Fig. 4 - Typical Junction Capacitance
Revision: 20-Jan-14
3
Document Number: 89116
For technical questions within your region: DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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