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参数资料
| 型号： | SMCJ33A |
| 厂商： | Bourns Inc. |
| 文件页数： | 4/5页 |
| 文件大小： | 0K |
| 描述： | DIODE TVS 33V 1500W UNI 5% SMD |
| 产品目录绘图： | SMCJ,SMLJ Series SMCJ,SMLJ Series Footprint |
| 特色产品： | SMAJ/SMBJ/SMCJ/SMLJ - Discrete TVS Diodes |
| 标准包装： | 1 |
| 系列： | SMCJ |
| 电压 - 反向隔离（标准值）： | 33V |
| 电压 - 击穿： | 36.7V |
| 功率（瓦特）： | 1500W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AB，SMC |
| 供应商设备封装： | SMC |
| 包装： | 标准包装 |
| 产品目录页面： | 2377 (CN2011-ZH PDF) |
| 其它名称： | SMCJ33ABDKR |
SMCJ Transient Voltage Suppressor Diode Series
Rating & Characteristic Curves
Pulse Derating Curve
Maximum Non-Repetitive Surge Current
100
200
75
100
50
25
10 x 1000 Waveform as Defined
Pulse Width 8.3 ms
Single Half Sine-Wave
0
by R.E.A.
10
(JEDEC Method)
0
25
50
75
100
125
150
175
200
1
2
5
10
20
50
100
Ambient Temperature ( °C)
Pulse Waveform
TR=10 μs
Number of Cycles at 60 Hz
Typical Junction Capacitance
10000
100
Peak value (IRSM)
IRSM
Half value=
2
Pulse width (TP)
is defined as that point
1000
Unidirectional
Bidirectional
TA = 25 °C
where the peak current
50
decays to 50 % of IPSM.
0
TA=25 °C
TP
10 x 1000 waveform
as defined by R.E.A.
100
0
0
1.0
2.0
3.0
4.0
0
10
100
1000
Pulse Rating Curve
T, Time (ms)
Standoff Voltage (Volts)
Steady State Power Derating Curve
100
TA = 25 °C
Non-repetitive Pulse Waveform
Shown in Pulse Waveform Graph
5.0
4.0
10
3.0
2.0
1.0
5.0 mm Lead Areas
1.0
60 Hz Resistive or
0.1
0.1 μs
1.0 μs
10 μs
100 μs
1.0 ms
10 ms
0.0
0
25
50
Inductive Load
75 100
125
150
175
200
TP, Pulse Width
TL, Lead Temperature (°C)
Speci?cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their speci?c applications.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMCJ33A R6 | 制造商:Taiwan Semiconductor 功能描述:Diode TVS Single Uni-Dir 33V 1.5KW 2-Pin SMC T/R |
| SMCJ33A | 制造商:Fairchild Semiconductor Corporation 功能描述:DIODE TVS SMC 1500W 33V 制造商:Littelfuse 功能描述:TVS DIODE 1.5KW 33V DO-214AB |
| SMCJ33A/57T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 33V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMCJ33A/59T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 33V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMCJ33A/7 | 制造商:Vishay Semiconductors 功能描述:Diode TVS Single Uni-Dir 33V 1.5KW 2-Pin SMC T/R |
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