参数资料
型号: SMBJ5.0CA
厂商: Bourns Inc.
文件页数: 4/5页
文件大小: 0K
描述: DIODE TVS 5.0V 600W BI 5% SMD
产品目录绘图: SMAJ,SMBJ Series
SMBJ Series Footprint
特色产品: SMAJ/SMBJ/SMCJ/SMLJ - Discrete TVS Diodes
标准包装: 1
系列: SMBJ
电压 - 反向隔离(标准值): 5V
电压 - 击穿: 6.4V
功率(瓦特): 600W
电极标记: 双向
安装类型: 表面贴装
封装/外壳: DO-214AA,SMB
供应商设备封装: SMB
包装: 标准包装
产品目录页面: 2377 (CN2011-ZH PDF)
其它名称: SMBJ5.0CABDKR
SMBJ5.0CADKR
SMBJ5.0CADKR-ND
SMBJ Transient Voltage Suppressor Diode Series
Rating & Characteristic Curves
Pulse Derating Curve
100
Maximum Non-Repetitive Surge Current
120
100
75
80
50
60
40
25
10 x 1000 Waveform as Defined
by R.E.A.
20
Pulse Width 8.3 ms
Single Half Sine-Wave
(JEDEC Method)
0
0
25
50
75
100
125
150
175
200
0
1
2
5
10
20
50
100
Ambient Temperature ( °C)
Pulse Waveform
TR=10 μs
Number of Cycles at 60 Hz
Typical Junction Capacitance
10000
100
Peak value (IRSM)
TA = 25 °C
Half value=
IRSM
2
Pulse width (TP)
is defined as that point
1000
Bidirectional
Unidirectional
where the peak current
50
decays to 50 % of IPSM.
0
TA=25 °C
TP
10 x 1000 waveform
as defined by R.E.A.
100
10
0
1.0
2.0
3.0
4.0
1
10
100
1000
Pulse Rating Curve
100
T, Time (ms)
TA = 25 °C
Non-repetitive
Standoff Voltage (Volts)
Steady State Power Derating Curve
5.0
4.0
10
Pulse Waveform
Shown in Pulse Waveform Graph
3.0
2.0
1.0
0.1
5.0 mm Lead Areas
1.0
0.0
60 Hz Resistive or
Inductive Load
0.1 μs
1.0 μs
10 μs
100 μs
1.0 ms
10 ms
0
25
50
75
100
125
150
175
200
TP, Pulse Width
TL, Lead Temperature (°C)
Speci?cations are subject to change without notice.
Customers should verify actual device performance in their speci?c applications.
相关PDF资料
PDF描述
CCA-10F/90 CARD RACK COMPACT PCI 3U
2-111623-2 CONN RCPT IDC 26POS 2MM POL GOLD
1658528-5 CONN RCPT 26POS .100 POLAR GOLD
CCK14S/90 CARD RACK KIT 3UX19X12 SNAP-IN
MDP160375R0GE04 RES ARRAY 75 OHM 8 RES 16-DIP
相关代理商/技术参数
参数描述
SMBJ50CA/2 制造商:GSI Technology 功能描述:
SMBJ50CA13 制造商:DIODES INC 功能描述:New
SMBJ50CA13F 制造商:DIODES INC 功能描述:Pb Free
SMBJ50CATR 制造商:GEN SEMI 功能描述:NEW
SMBJ51 功能描述:TVS 二极管 - 瞬态电压抑制器 51Vr 600W 7.3A 10% UniDirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C