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参数资料
| 型号： | SBL2040CTHE3/45 |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 143K |
| 描述： | DIODE SCHOTTKY 40V 20A TO-220AB |
| 标准包装： | 1,000 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 600mV @ 10A |
| 电流 - 在 Vr 时反向漏电： | 1mA @ 40V |
| 电流 - 平均整流 (Io)（每个二极管）： | 10A |
| 电压 - (Vr)（最大）： | 40V |
| 二极管类型： | 肖特基 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
SBL(F,B)2030CT & SBL(F,B)2040CT
Vishay General Semiconductor
www.vishay.com For technical questions within your
region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88730
Revision: 25-Apr-08
2
Note:
(1) Pulse test: 300
μs pulse width, 1 % duty cycle
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA
= 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TC
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Maximum instantaneous forward voltage per diode
(1)
10 A VF
0.6 V
Maximum instantaneous current at rated DC blocking
voltage per diode (1)
TC
= 25 °C
TC
= 100 °C
IR
1.0
50
mA
THERMAL CHARACTERISTICS (TC
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SBL SBLF SBLB UNIT
Typical thermal resistance from
junction to case per diode R
θJC
2.0 4.0 2.0 °C/W
ORDERING INFORMATION
(Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB SBL2030CT-E3/45 1.85 45 50/tube Tube
ITO-220AB SBLF2030CT-E3/45 1.99 45 50/tube Tube
TO-263AB SBLB2030CT-E3/45 1.35 45 50/tube Tube
TO-263AB SBLB2030CT-E3/81 1.33 81 800/reel Tape and reel
TO-220AB SBL2030CTHE3/45
(1)
1.85 45 50/tube Tube
ITO-220AB SBLF2030CTHE3/45
(1)
1.99 45 50/tube Tube
TO-263AB SBLB2030CTHE3/45
(1)
1.35 45 50/tube Tube
TO-263AB SBLB2030CTHE3/81
(1)
1.33 81 800/reel Tape and reel
Figure 1. Forward Current Derating Curve
0
15
20
30
25
0 50 100 150
10
5
Lead Temperature (°C)
A
v
erage For
w
ard Re
ctified C
u
rrent (A)
Resistive or Inductive Load
TJ
= 150 °C
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0
50
100
150
250
200
1 10010
300
TJ
= T
J
Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak For
w
ard S
u
rge C
u
rrent (A)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SBL2040F | 制造商:JSMC 制造商全称:JILIN SINO-MICROELECTRONICS CO., LTD. 功能描述:SCHOTTKY BARRIER DIODE |
| SBL2040FCT | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:20 Amp Schottky Barrier Rectifier 30 to 45 Volts |
| SBL2040FR | 制造商:JSMC 制造商全称:JILIN SINO-MICROELECTRONICS CO., LTD. 功能描述:SCHOTTKY BARRIER DIODE |
| SBL2040HF | 制造商:JSMC 制造商全称:JILIN SINO-MICROELECTRONICS CO., LTD. 功能描述:SCHOTTKY BARRIER DIODE |
| SBL2040HFR | 制造商:JSMC 制造商全称:JILIN SINO-MICROELECTRONICS CO., LTD. 功能描述:SCHOTTKY BARRIER DIODE |
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