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参数资料
| 型号： | S25FL004D0LMFI013 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| 中文描述： | 4M X 1 FLASH 3V PROM, PDSO8 |
| 封装： | 0.208 INCH, LEAD FREE, SOP-8 |
| 文件页数： | 9/36页 |
| 文件大小： | 724K |
| 代理商： | S25FL004D0LMFI013 |
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June 28, 2004 S25FL004D_00A0
S25FL Family (Serial Peripheral Interface) S25FL004D
17
Ad va nc e
In forma t i o n
Figure 8. Write Status Register (WRSR) Instruction Sequence
Table 4. Protection Modes
5. As defined by the values in the Block Protect (BP2, BP1, BP0) bits of the Status Register, as shown in Table 1.
The protection features of the device are summarized in Table 4.
When the Status Register Write Disable (SRWD) bit of the Status Register is 0 (its
initial delivery state), it is possible to write to the Status Register provided that
the Write Enable Latch (WEL) bit has previously been set by a Write Enable
(WREN) instruction, regardless of the whether Write Protect (W#) is driven High
or Low.
When the Status Register Write Disable (SRWD) bit of the Status Register is set
to 1, two cases need to be considered, depending on the state of Write Protect
(W#):
If Write Protect (W#) is driven High, it is possible to write to the Status Reg-
ister provided that the Write Enable Latch (WEL) bit has previously been set
by a Write Enable (WREN) instruction.
If Write Protect (W#) is driven Low, it is not possible to write to the Status
Register even if the Write Enable Latch (WEL) bit has previously been set by
a Write Enable (WREN) instruction. (Attempts to write to the Status Register
are rejected, and are not accepted for execution). As a consequence, all the
data bytes in the memory area that are software protected (SPM) by the
Block Protect (BP2, BP1, BP0) bits of the Status Register, are also hardware
protected against data modification.
Regardless of the order of the two events, the Hardware Protected Mode (HPM)
can be entered:
by setting the Status Register Write Disable (SRWD) bit after driving Write
Protect (W#) Low
W# Signal SRWD Bit
Mode
Write Protection of the Status
Register
Protected Area
(Note 1)
Unprotected Area
(Note 1)
1
Software
Protected
(SPM)
Status Register is Writeable (if the
WREN instruction has set the WEL
bit)
The values in the SRWD, BP2, BP1
and BP0 bits can be changed
Protected against Page
Program and Erase
(SE, BE)
Ready to accept Page
Program and Sector
Erase Instructions
1
0
1
Hardware
Protected
(HPM)
Status Register is Hardware write
protected
The values in the SRWD, BP2, BP1
and BP0 bits cannot be changed
Protected against Page
Program and Erase
(SE, BE)
Ready to accept Page
Program and Sector
Erase Instructions
High Impedance
MSB
Instruction
Status
Register In
CS#
SCK
SI
SO
0 12 3 4 5 6 7 8 9 10 11 12 13 14 15
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相关代理商/技术参数 |
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| S25FL004D0LNAI011 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| S25FL004D0LNAI013 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| S25FL004D0LNFI011 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| S25FL004D0LNFI013 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| S25FL004K0XMFI010 | 功能描述:闪存 4-MBIT CMOS 3V FLASH MEMORY 104MHz SPI RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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