参数资料
型号: QSE113
厂商: Fairchild Optoelectronics Group
文件页数: 4/4页
文件大小: 0K
描述: IC PHOTOTRANS IR 880NM SIDE-LOOK
产品目录绘图: QSE Series Pin Out
QS(C,D,E) Circuit
标准包装: 500
电压 - 集电极发射极击穿(最大): 30V
电流 - 暗 (Id)(最大): 100nA
波长: 880nm
视角: 50°
功率 - 最大: 100mW
安装类型: 通孔
方向: 侧视图
封装/外壳: 径向
产品目录页面: 2777 (CN2011-ZH PDF)
其它名称: QSE113QT
QSE113QT-ND
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSE113
QSE114
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD ’ S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
? 2002 Fairchild Semiconductor Corporation
Page 4 of 4
5/1/02
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相关代理商/技术参数
参数描述
QSE113 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOSwITCH
QSE113 制造商:Fairchild Semiconductor Corporation 功能描述:INFRARED PHOTOTRANSISTOR
QSE113_0203 制造商:Fairchild Semiconductor Corporation 功能描述:SIDELOOKER SENSOR - Bulk
QSE113_Q 功能描述:光电晶体管 0.25mA PHOTO TRANS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1
QSE113E3R0 功能描述:光电晶体管 0.25mA, 5V Phototransistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1