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参数资料
| 型号： | QEB373ZR |
| 厂商： | Fairchild Optoelectronics Group |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | DIODE IR 940NM 2MM ZB TOPLOOKER |
| 标准包装： | 1 |
| 电流 - DC 正向(If)： | 100mA |
| 辐射强度(le)最小值@正向电流： | 16mW/sr @ 100mA |
| 波长： | 880nm |
| 正向电压： | 1.7V |
| 视角： | 24° |
| 方向： | 顶视图 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 2-SMD，Z形弯曲d |
| 包装： | 标准包装 |
| 其它名称： | QEB373ZRDKR |
Absolute Maximum Ratings (T A = 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
T OPR
T STG
T SOL-I
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron) (2,3,4)
Rating
-40 to +100
-40 to +100
240 for 5 sec
Unit
°C
°C
°C
T SOL-F
Soldering Temperature
(Flow) (2,3)
260 for 10 sec
°C
I F
V R
Continuous Forward Current
Reverse Voltage
50
5
mA
V
P D
Power
Dissipation (1)
100
mW
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical/Optical Characteristics (T A = 25°C)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
λ P
Θ
V F
I R
I e
t r
t f
Peak Emission Wavelength
Emission Angle
Forward Voltage
Reverse Current
Radiant Intensity
Rise Time
Fall Time
I F = 100mA
I F = 100mA
I F = 100mA, t p = 20ms
V R = 5V
I F = 100mA, tp = 20ms
I F = 100mA
t p = 20ms
16
875
±12
800
800
1.7
100
nm
°
V
μA
mW/sr
ns
ns
?2009 Fairchild Semiconductor Corporation
QEB373 Rev. 1.0.1
2
www.fairchildsemi.com
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