参数资料
型号: NCV33164D-3R2G
厂商: ON Semiconductor
文件页数: 3/12页
文件大小: 0K
描述: IC SENSOR UNDERVOLTAGE 3V 8SOIC
标准包装: 1
类型: 简单复位/加电复位
监视电压数目: 1
输出: 开路漏极或开路集电极
复位: 低有效
电压 - 阀值: 2.71V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 剪切带 (CT)
其它名称: NCV33164D-3R2GOSCT
MC34164, MC33164, NCV33164
MC34164 ? 5, MC33164 ? 5 SERIES, NCV33164 ? 5
ELECTRICAL CHARACTERISTICS (For typical values T A = 25 ° C, for min/max values T A is the operating ambient temperature
range that applies [Notes 5 & 6], unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
COMPARATOR
Threshold Voltage
High State Output (V in Increasing)
Low State Output (V in Decreasing)
Hysteresis (I Sink = 100 m A)
V IH
V IL
V H
4.15
4.15
0.02
4.33
4.27
0.09
4.45
4.45
?
V
RESET OUTPUT
Output Sink Saturation
(V in = 4.0 V, I Sink = 1.0 mA)
(V in = 1.0 V, I Sink = 0.25 mA)
Output Sink Current (V in , Reset = 4.0 V)
Output Off ? State Leakage
(V in , Reset = 5.0 V)
(V in , Reset = 10 V)
Clamp Diode Forward Voltage, Reset to Input Pin (I F = 5.0 mA)
V OL
I Sink
I R(leak)
V F
?
?
7.0
?
?
0.6
0.14
0.1
20
0.02
0.02
0.9
0.4
0.3
50
0.5
2.0
1.2
V
mA
m A
V
TOTAL DEVICE
Operating Input Voltage Range
Quiescent Input Current
V in = 5.0 V
V in = 10 V
V in
I in
1.0 to 10
?
?
?
12
32
?
20
50
V
m A
4. Maximum package power dissipation limits must be observed.
5. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
6. T low = 0 ° C for MC34164 T high = +70 ° C for MC34164
= ? 40 ° C for MC33164, NCV33164 = +125 ° C for MC33164, NCV33164
7. NCV prefix is for automotive and other applications requiring site and change control.
10
10
8.0
6.0
4.0
2.0
0
R L = 82 k to V in
T A = 25 ° C
8.0
6.0
4.0
2.0
0
R L = 82 k to V in
T A = 25 ° C
0
2.0
4.0
6.0
8.0
10
0
2.0
4.0
6.0
8.0
10
V in , INPUT VOLTAGE (V)
Figure 2. MC3X164 ? 3 Reset Output
Voltage versus Input Voltage
http://onsemi.com
3
V in , INPUT VOLTAGE (V)
Figure 3. MC3X164 ? 5 Reset Output
Voltage versus Input Voltage
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