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参数资料
| 型号： | MWI50-12T7T |
| 厂商： | IXYS |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOD IGBT SIX-PACK RBSOA E2 |
| 标准包装： | 6 |
| IGBT 类型： | 沟道 |
| 配置： | 三相反相器 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.15V @ 15V，50A |
| 电流 - 集电极 (Ic)（最大）： | 80A |
| 电流 - 集电极截止（最大）： | 4mA |
| Vce 时的输入电容 (Cies)： | 3.5nF @ 25V |
| 功率 - 最大： | 270W |
| 输入： | 标准 |
| NTC 热敏电阻： | 是 |
| 安装类型： | 底座安装 |
| 封装/外壳： | E2 |
| 供应商设备封装： | E2 |
MWI 50-12T7T
Output Inverter T1 - T6
Ratings
Symbol
V CES
V GES
V GEM
I C25
I C80
P tot
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
Conditions
continuous
transient
T VJ = 25°C
T C = 25°C
T C = 80°C
T C = 25°C
min.
typ.
max.
1200
±20
±30
80
50
270
Unit
V
V
V
A
A
W
V CE(sat)
collector emitter saturation voltage
I C = 50 A; V GE = 15 V
on chip level
T VJ = 25°C
T VJ = 125°C
1.7
2.0
2.15
V
V
V GE(th)
I CES
gate emitter threshold voltage
collector emitter leakage current
I C = 2 mA; V GE = V CE
V CE = V CES ; V GE = 0 V
T VJ = 25°C
T VJ = 25°C
T VJ = 125°C
5
5.8
2
6.5
2
V
mA
mA
I GES
C ies
Q G(on)
gate emitter leakage current
input capacitance
total gate charge
V GE = ±20 V
V CE = 25 V; V GE = 0 V; f = 1 MHz
V CE = 600 V; V GE = ±15 V; I C = 50 A
3500
470
400
nA
pF
nC
t d(on)
t r
t d(off)
t f
E on
E off
RBSOA
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
inductive load
V CE = 600 V; I C = 50 A
V GE = ±15 V; R G = 18 W
L S = 70 nH
V GE = ±15 V; R G = 18 W
T VJ = 125°C
T VJ = 125°C
V CEK = 1150 V
90
50
520
90
5
6.5
100
ns
ns
ns
ns
mJ
mJ
A
SCSOA
short circuit safe operating area
t SC
I SC
R thJC
short circuit duration
short circuit current
thermal resistance junction to case
V CE = 900 V; V GE = ±15 V;
R G = 18 W ; non-repetitive
(per IGBT)
T VJ = 125°C
200
10
0.46
μs
A
K/W
Output Inverter D1 - D6
Ratings
Symbol
V RRM
I F25
I F80
V F
Q rr
I RM
t rr
E rec
R thJC
Definitions
max. repetitve reverse voltage
forward current
forward voltage
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
Conditions
I F = 60 A; V GE = 0 V
V R = 600 V
di F /dt = -1200 A/μs
I F = 60 A; V GE = 0 V
(per diode)
T VJ = 25°C
T C = 25°C
T C = 80°C
T VJ = 25°C
T VJ = 125°C
T VJ = 125°C
min.
typ.
1.95
1.95
8
60
350
2.5
max.
1200
85
57
2.2
0.6
Unit
V
A
A
V
V
μC
A
ns
mJ
K/W
T C = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
? 2010 IXYS All rights reserved
20100831d
2-7
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