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参数资料
| 型号： | MRF6P9220HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN |
| 文件页数： | 9/12页 |
| 文件大小： | 458K |
| 代理商： | MRF6P9220HR3 |
AR
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HIVE
INF
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RMA
TI
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ARCHIVE
INFORMA
TION
6
RF Device Data
Freescale Semiconductor
MRF6P9220HR3
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
90
10
7th Order
Pout, OUTPUT POWER (WATTS) PEP
VDD = 28 Vdc, IDQ = 1600 mA, f1 = 879.95 MHz
f2 = 880.05 MHz, TwoTone Measurements
3rd Order
20
30
40
50
100
500
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
60
5th Order
7
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
10
60
20
0.1
7th Order
TWOTONE SPACING (MHz)
VDD = 28 Vdc, Pout = 220 W (PEP)
IDQ = 1600 mA, TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
5th Order
3rd Order
30
40
50
150
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
Figure 9. Pulsed CW Output Power versus
Input Power
41
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 1600 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 880 MHz
61
59
57
49
Actual
Ideal
51
29
P
out
,OUTPUT
POWER
(dBm)
55
53
31
33
35
37
39
P6dB = 54.95 dBm (312.77 W)
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dBc)
Figure 10. Single-Carrier N-CDMA ACPR, Power Gain
and Drain Efficiency versus Output Power
0
55
Pout, OUTPUT POWER (WATTS) AVG.
50
30
10
35
40
50
10
100
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
Gps
ACPR
30
_C
40
1
300
20
45
85
_C
TC = 30_C
25
_C
ηD
80
70
VDD = 28 Vdc, IDQ = 1600 mA
f = 880 MHz, NCDMA IS95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
P3dB = 54.60 dBm (288.76 W)
P1dB = 54.05 dBm (255.09 W)
25
_C
25
_C
85
_C
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| MRF6S18060NBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6S18060NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6P9220HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P9220HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P9220HR5 | 功能描述:MOSFET RF N-CH 28V 47W NI-860C3 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6S18060MBR1 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S18060NBR1 | 功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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