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参数资料
| 型号： | MRF5S9101NBR1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封装： | PLASTIC, CASE 1484-02, 4 PIN |
| 文件页数： | 13/16页 |
| 文件大小： | 451K |
| 代理商： | MRF5S9101NBR1 |
MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS - 900 MHz
1020
10
18
860
45
70
60
17
50
16
40
15
30
14
0
13
12
15
11
30
880
900
920
940
960
980
1000
G
ps
,POWER
GAIN
(dB)
INPUT
RETURN
LOSS
(dB)
IRL,
f, FREQUENCY (MHz)
Figure 3. Power Gain, Input Return Loss and
Drain Efficiency versus Frequency at 100 W CW
IRL
Gps
VDD = 26 Vdc
IDQ = 700 mA
1020
10
19
860
24
50
45
17
35
16
30
15
14
8
13
12
16
11
20
880
900
920
940
960
980
1000
G
ps
,POWER
GAIN
(dB)
IRL
Gps
VDD = 26 Vdc
IDQ = 700 mA
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss and
Drain Efficiency versus Frequency at 40 W CW
18
12
40
1000
14
19
1
IDQ = 1500 mA
1300 mA
Pout, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus Output Power
G
ps
,POWER
GAIN
(dB)
VDD = 26 Vdc
f = 940 MHz
1100 mA
900 mA
700 mA
500 mA
300 mA
18
17
16
15
10
100
200
14
19
0
Pout, OUTPUT POWER (WATTS) CW
Figure 6. Power Gain versus Output Power
G
ps
,POWER
GAIN
(dB)
VDD = 12 V
16 V
24 V
28 V
32 V
18
17
16
15
20
40
60
80
100
120
140
160
180
20 V
η
D
,DRAIN
EFFICIENCY
(%)
INPUT
RETURN
LOSS
(dB)
IRL,
η
D
,DRAIN
EFFICIENCY
(%)
ηD
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PDF描述 |
|---|---|
| MRF5S9101MR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF5S9101MBR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF5S9101NBR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF5S9150HR3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6P21190HR6 | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S9101NR1 | 功能描述:射频MOSFET电源晶体管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9150HR3 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9150HR3_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF5S9150HR5 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9150HSR3 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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