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参数资料
| 型号： | MRF5S9070NR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1265-09, 2 PIN |
| 文件页数： | 7/14页 |
| 文件大小： | 548K |
| 代理商： | MRF5S9070NR1 |
2
RF Device Data
Freescale Semiconductor
MRF5S9070NR1
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μA)
VGS(th)
2
2.7
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 600 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1.0 Adc)
VDS(on)
—
0.18
0.22
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 4 Adc)
gfs
—
4.7
—
S
Dynamic Characteristic
Input Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
—
126
—
pF
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
34
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.37
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 600 mA, Pout = 14 W Avg., f = 880 MHz, Single-Carrier
N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF
Power Gain
Gps
17
17.8
—
dB
Drain Efficiency
ηD
29
30
—
%
Adjacent Channel Power Ratio
ACPR
—
-47
-45
dBc
Input Return Loss
IRL
—
-19
-9
dB
Typical GSM CW Performances (In Freescale GSM Test Fixture Optimized for 921-960 MHz, 50 οhm system) VDD = 26 Vdc, IDQ = 400 mA,
Pout = 60 W, f = 921-960 MHz
Power Gain
Gps
—
16.4
—
dB
Drain Efficiency
ηD
—
62
—
%
Input Return Loss
IRL
—
-12
—
dB
Pout @ 1 dB Compression Point
(f = 940 MHz)
P1dB
—
68
—
W
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921-960 MHz, 50 οhm system) VDD = 26 Vdc,
IDQ = 400 mA, Pout = 25 W Avg., f = 921-960 MHz, GSM EDGE Signal
Power Gain
Gps
—
17
—
dB
Drain Efficiency
ηD
—
44
—
%
Error Vector Magnitude
EVM
—
1.5
—
%
Spectral Regrowth at 400 kHz Offset
SR1
—
-62
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
-78
—
dBc
(continued)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S9070NR5 | 功能描述:射频MOSFET电源晶体管 70W RF POWER FET TO270 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9080NBR1 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 80W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9080NR1 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 80W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9100MBR1 | 功能描述:MOSFET RF N-CH 26V 20W TO-272-4 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S9100MR1 | 功能描述:MOSFET RF N-CH 26V 20W TO-270-4 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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