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参数资料
| 型号： | MRF5S21130HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN |
| 文件页数： | 7/12页 |
| 文件大小： | 398K |
| 代理商： | MRF5S21130HR3 |
RF Device Data
Freescale Semiconductor
MRF5S21130HR3 MRF5S21130HSR3
Figure 2. MRF5S21130HR3(SR3) Test Circuit Component Layout
MRF5S21130
C1
R1
R2
C7
C8
C3
C5
C4
C6
C9
C11
C13 C15
C10
C12
C14 C16
C17
C19
C18
C20
C2
CUT
OUT
AREA
Rev 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
相关PDF资料 |
PDF描述 |
|---|---|
| MRF5S21130SR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21130R3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21150HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21150HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21150SR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S21130HR5 | 功能描述:射频MOSFET电源晶体管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S21130HS | 制造商:Motorola Inc 功能描述: |
| MRF5S21130HSR3 | 功能描述:射频MOSFET电源晶体管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S21130HSR5 | 功能描述:射频MOSFET电源晶体管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S21130R3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
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