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参数资料
| 型号： | MRF5S21045NR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4 |
| 文件页数： | 15/16页 |
| 文件大小： | 621K |
| 代理商： | MRF5S21045NR1 |
8
RF Device Data
Freescale Semiconductor
MRF5S21045NR1 MRF5S21045NBR1
Figure 15. Series Equivalent Source and Load Impedance
f
MHz
Zsource
Ω
Zload
Ω
2000
2110
2140
4.78 - j5.19
3.81 - j3.69
4.04 - j4.14
8.15 - j5.91
7.07 - j7.32
6.28 - j7.71
VDD = 28 Vdc, IDQ = 500 mA, Pout = 10 W Avg.
Zo = 10 Ω
Zload
f = 2000 MHz
f = 2200 MHz
Zsource
2170
2200
3.57 - j3.11
3.69 - j3.39
5.61 - j7.85
4.92 - j7.85
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Z
source
Z
load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
f = 2000 MHz
f = 2200 MHz
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| MRF5S21045NBR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF5S21090LR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21100HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S21100HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S21045NR1_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21090HR3 | 功能描述:射频MOSFET电源晶体管 HV5 RF PWR LDMOS NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S21090HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S21090HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF5S21090HR5 | 功能描述:射频MOSFET电源晶体管 HV5 RF PWR LDMOS NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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