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参数资料
| 型号： | MRF5S21045NBR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB-4 |
| 文件页数： | 12/16页 |
| 文件大小： | 621K |
| 代理商： | MRF5S21045NBR1 |
MRF5S21045NR1 MRF5S21045NBR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
,POWER
GAIN
(dB)
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
-20
-8
-1 1
-14
-17
IRL,
INPUT
RETURN
LOSS
(dB)
IM3
(dBc),
ACPR
(dBc)
-22
-10
-13
-16
-19
2220
2060
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ Pout = 10 Watts
2200
2180
2160
2140
2120
2100
2080
13.4
15.2
15
-44
32
28
24
20
16
-32
-36
-40
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ Pout = 20 Watts
Figure 5. Two-T one Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
100
11
17
1
IDQ = 800 mA
650 mA
Pout, OUTPUT POWER (WATTS) PEP
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurements
15
13
12
10
-40
-1 0
1
Pout, OUTPUT POWER (WATTS) PEP
10
-2 0
-3 0
100
-60
-5 0
η
D
,DRAIN
EFFICIENCY
(%)
ηD
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
THIRD
ORDER
14.8
14.6
14.4
14.2
14
13.8
13.6
-28
VDD = 28 Vdc, Pout = 10 W (Avg.), IDQ = 500 mA
2-Carrier W-CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
2220
2060
2200
2180
2160
2140
2120
2100
2080
13
14.8
-34
46
42
38
34
30
-22
-26
-30
14.4
14.2
14
13.8
13.6
13.4
13.2
-18
14.6
IRL
Gps
ACPR
IM3
ηD
VDD = 28 Vdc, Pout = 20 W (Avg.), IDQ = 500 mA
2-Carrier W-CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
16
14
500 mA
350 mA
200 mA
IDQ = 200 mA
650 mA
800 mA
500 mA
350 mA
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurements
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S21045NR1 | 功能描述:射频MOSFET电源晶体管 2170MHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S21045NR1_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21090HR3 | 功能描述:射频MOSFET电源晶体管 HV5 RF PWR LDMOS NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S21090HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S21090HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
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