参数资料
型号: MRF5S21045MR1
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
封装: PLASTIC, CASE 1486-03, 4 PIN
文件页数: 15/16页
文件大小: 563K
代理商: MRF5S21045MR1
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
8
RF Device Data
Freescale Semiconductor
MRF5S21045MR1 MRF5S21045MBR1
Figure 15. Series Equivalent Source and Load Impedance
f
MHz
Zsource
Ω
Zload
Ω
2000
2110
2140
4.78 - j5.19
3.81 - j3.69
4.04 - j4.14
8.15 - j5.91
7.07 - j7.32
6.28 - j7.71
VDD = 28 Vdc, IDQ = 500 mA, Pout = 10 W Avg.
Zo = 10 Ω
Zload
f = 2000 MHz
f = 2200 MHz
Zsource
2170
2200
3.57 - j3.11
3.69 - j3.39
5.61 - j7.85
4.92 - j7.85
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
f = 2000 MHz
f = 2200 MHz
相关PDF资料
PDF描述
MRF5S21045NR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF5S21045NBR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF5S21090LR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5S21100HR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5S21100HSR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
相关代理商/技术参数
参数描述
MRF5S21045NBR1 功能描述:射频MOSFET电源晶体管 2170MHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S21045NR1 功能描述:射频MOSFET电源晶体管 2170MHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S21045NR1_09 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21090HR3 功能描述:射频MOSFET电源晶体管 HV5 RF PWR LDMOS NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S21090HR3_06 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors