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参数资料
| 型号： | MRF5S19150S |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-880S, CASE 465C-02, 2 PIN |
| 文件页数： | 8/12页 |
| 文件大小： | 457K |
| 代理商： | MRF5S19150S |
5
MRF5S19150 MRF5S19150R3 MRF5S19150S MRF5S19150SR3
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
η
2020
5
15
1900
-55
40
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2–Carrier N–CDMA Broadband Performance
G
ps
,POWER
GAIN
(dB)
,DRAINη
-60
-10
-20
-30
-40
INPUT
RETURN
LOSS
(dB)
IRL,
VDD = 28 Vdc, Pout = 32 W (Avg.), IDQ = 1400 mA
2-Carrier N-CDMA, 2.5 MHz Carrier Spacing
1.228 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
EFFICIENCY
(%)
IM3
(dBc),
ACPR
(dBc)
-50
14
35
13
30
12
25
11
20
10
-30
9
-35
8
-40
7
-45
6
-50
1920
1940
1960
1980
2000
100
11
16
1
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two–Tone Power Gain versus
Output Power
G
ps
,POWER
GAIN
(dB)
10
15
14
13
12
IDQ = 2100 mA
1700 mA
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two-Tone Measurement, 2.5 MHz Tone Spacing
1400 mA
700 mA
1050 mA
100
-55
-15
1
IDQ = 2100 mA
1700 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation versus
Output Power
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two-Tone Measurement, 2.5 MHz Tone Spacing
INTERMODULA
TION
DIST
OR
TION
(dBc)
IM3,
THIRD
ORDER
10
1400 mA
700 mA
1050 mA
-20
-25
-30
-35
-40
-45
-50
10
-60
-20
0.1
TWO-TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
3rd Order
VDD = 28 Vdc, Pout = 150 W (PEP), IDQ = 1400 mA
Two-Tone Measurements, Center Frequency = 1960 MHz
5th Order
7th Order
-25
-30
-35
-40
-45
-50
-55
1
45
49
59
35
P3dB = 53.71 dBm (234.96 W)
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
P out
,OUTPUT
POWER
(dBm)
VDD = 28 Vdc, IDQ = 1400 mA
Pulsed CW, 8 sec (on), 1 msec (off)
Center Frequency = 1960 MHz
44
43
42
41
40
39
38
37
36
58
57
56
55
54
53
52
51
50
P1dB = 53.01 dBm (199.99 W)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S19150SR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
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| MRF5S21045MBR1 | 功能描述:MOSFET RF N-CH 28V 10W TO272-4 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S21045MR1 | 功能描述:MOSFET RF N-CH 28V 10W TO270-4 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S21045NBR1 | 功能描述:射频MOSFET电源晶体管 2170MHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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