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| 型号： | MRF5S19130SR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-880S, CASE 465C-02, 2 PIN |
| 文件页数： | 7/12页 |
| 文件大小： | 417K |
| 代理商： | MRF5S19130SR3 |
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MRF5S19130R3 MRF5S19130SR3
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
Figure 2. MRF5S19130R3(SR3) Test Circuit Component Layout
MRF5S19130
Rev 5
CUT
OUT
AREA
VGG
VDD
C24
C21
C20
C19
C18
C15
C23
C22
C17
C16
C25
C32
C31
C30
C29
C34
C33
C28
C27
C26
C14
C12
C11
C6
C7
C10
B2
R4
C13
C1
C2
C3
C4
C5
C9
R2
R1
B1
R3
C8
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S19150 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S19150H | 制造商:Freescale Semiconductor 功能描述:L BAND, SI, N-CHANNEL, RF POWER, MOSFET |
| MRF5S19150HR3 | 功能描述:射频MOSFET电源晶体管 HV5 32W N/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S19150HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF5S19150HR5 | 功能描述:射频MOSFET电源晶体管 HV5 32W N/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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