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参数资料
| 型号： | MRF5S19100LR3 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-780, CASE 465-06, 2 PIN |
| 文件页数： | 5/12页 |
| 文件大小： | 611K |
| 代理商： | MRF5S19100LR3 |
MRF5S19100LR3 MRF5S19100LSR3
2
MOTOROLA RF DEVICE DATA
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
1
Adc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
Adc
ON CHARACTERISTICS (DC)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 240 Adc)
VGS(th)
—
2.7
—
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1000 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 2.4 Adc)
VDS(on)
—
0.26
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2.4 Adc)
gfs
—
6.3
—
S
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 28 Vdc, VGS = 0, f = 1.0 MHz)
Crss
—
2.2
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2–Carrier N–CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR
measured in 30 kHz Bandwidth and IM3 measured in 1.2288 MHz Bandwidth. Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
(VDD = 28 Vdc, Pout = 22 W Avg., IDQ = 1000 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
Gps
12.5
13.9
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 22 W Avg., IDQ = 1000 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
η
24
25.5
—
%
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 22 W Avg., IDQ = 1000 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); IM3 measured
over 1.2288 MHz bandwidth @ f1 –2.5 MHz and f2 = +2.5 MHz)
IM3
—
–36.5
–35
dBc
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 22 W Avg., IDQ = 1000 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); ACPR
measured over 30 kHz bandwidth @ f1 –885 MHz and f2 =+885 MHz)
ACPR
—
–50.7
–48
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 22 W Avg., IDQ = 1000 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
IRL
—
–13
–9
dB
(1) Part is internally matched both on input and output.
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相关代理商/技术参数 |
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| MRF5S19130HR3 | 功能描述:射频MOSFET电源晶体管 HV5 28V 26W WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S19130HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF5S19130HR5 | 功能描述:射频MOSFET电源晶体管 HV5 28V 26W WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S19130HSR3 | 功能描述:射频MOSFET电源晶体管 HV5 28V26W WCDMA NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S19130HSR5 | 功能描述:射频MOSFET电源晶体管 HV5 28V26W WCDMA NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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