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参数资料
| 型号： | MRF5S19090LR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-780, CASE 465-06, 2 PIN |
| 文件页数： | 8/12页 |
| 文件大小： | 414K |
| 代理商： | MRF5S19090LR3 |
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ARCHIVE
INFORMA
TION
Fr
eescale
Semiconductor
,Inc.
Freescale Semiconductor, Inc.
MRF5S19090LR3 MRF5S19090LSR3
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
TYPICAL CHARACTERISTICS
η
6
16
1860
60
40
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance
G
ps
,POWER
GAIN
(dB)
,DRAINη
IM3
(dBc),
ACPR
(dBc)
50
10
20
30
40
INPUT
RETURN
LOSS
(dB)
IRL,
VDD = 28 Vdc, Pout = 18 W (Avg.), IDQ = 850 mA
2Carrier NCDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
14
30
12
20
10
20
8
40
1880 1900 1920 1940 1960 1980 2000 2020 2040 2060 2080
0
EFFICIENCY
(%)
100
12
17
1
1100 mA
IDQ = 1300 mA
850 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two-Tone Power Gain versus
Output Power
G
ps
,POWER
GAIN
(dB)
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
TwoTone Measurement, 2.5 MHz Tone Spacing
650 mA
450 mA
10
16
15
14
13
100
55
15
1
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
IM3,
THIRD
ORDER
INTERMODULA
TION
DIST
ORTION
(dBc)
1100 mA
1300 mA
850 mA
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
TwoTone Measurement, 2.5 MHz Tone Spacing
650 mA
IDQ = 450 mA
10
20
25
30
35
40
45
50
10
55
25
0.1
7th Order
TWOTONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
VDD = 28 Vdc, Pout = 90 W (PEP), IDQ = 850 mA
TwoTone Measurements, Center Frequency = 1960 MHz
30
35
40
45
50
1
5th Order
3rd Order
42
45
56
31
P3dB = 51.21 dBm (132.13 W)
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
P out
,
OUTPUT
POWER
(dBm)
VDD = 28 Vdc, IDQ = 850 mA
Pulsed CW, 8
sec(on), 1 msec(off)
Center Frequency = 1960 MHz
41
P1dB = 50.82 dBm (120.78 W)
Ideal
Actual
55
54
53
52
51
50
49
48
47
46
32
33
34
35
36
37
38
39
40
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S19090LSR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF5S19100HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S19100HR | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF5S19100HR3 | 功能描述:MOSFET RF N-CHAN 28V 22W NI-780 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S19100HR5 | 功能描述:MOSFET RF N-CHAN 28V 22W NI-780 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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