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参数资料
| 型号： | MRF5S19090L |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-780, CASE 465-06, 2 PIN |
| 文件页数： | 9/12页 |
| 文件大小： | 442K |
| 代理商： | MRF5S19090L |
MRF5S19090L MRF5S19090LR3 MRF5S19090LSR3
6
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
η
0
40
1
-65
-25
IM3
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. 2–Carrier N–CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
IM3
(dBc),
ACPR
(dBc)
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
VDD = 28 Vdc, IDQ = 850 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2 x N-CDMA, 2.5 MHz @ 1.2288 MHz Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
IM3
η
35
-30
30
-35
25
-40
20
-45
15
-50
10
-55
5
-60
10
-100
0
f, FREQUENCY (MHz)
Figure 9. 2–Carrier N–CDMA Spectrum
(dB)
-10
-20
-30
-40
-50
-60
-70
-80
-90
220
109
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. MTBF Factor versus Junction Temperature
MTBF
F
ACT
OR
(HOURS
x
AMPS
)2
This above graph displays calculated MTBF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTBF factor by ID2 for MTBF in a particular application.
108
107
106
120
140
160
180
200
-ACPR @ 30 kHz
Integrated BW
+ACPR @ 30 kHz
Integrated BW
-IM3 @
1.2288 MHz
Integrated BW
+IM3 @
1.2288 MHz
Integrated BW
1.2288 MHz
Channel BW
6
1.5
4.5
3
0
-1.5
-3
-4.5
-6
-7.5
7.5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S19090LR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF5S19090LSR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF5S19100HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S19100HR | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF5S19100HR3 | 功能描述:MOSFET RF N-CHAN 28V 22W NI-780 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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