参数资料
型号: MRF5S19060NR1
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
封装: ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4, 4 PIN
文件页数: 7/16页
文件大小: 595K
代理商: MRF5S19060NR1
MRF5S19060NR1 MRF5S19060NBR1
15
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
7
Oct. 2008
Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN12779, p. 1, 2
Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part
numbers, p. 3
Replaced Case Outline 1486-03, Issue C, with 1486-03, Issue D, p. 9-11. Added pin numbers 1 through 4
on Sheet 1.
Replaced Case Outline 1484-04, Issue D, with 1484-04, Issue E, p. 12-14. Added pin numbers 1 through
4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations.
Added Product Documentation and Revision History, p. 15
相关PDF资料
PDF描述
MRF5S19060NBR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF5S19090HSR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5S19090LSR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5S19090LR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5S19090L L BAND, Si, N-CHANNEL, RF POWER, MOSFET
相关代理商/技术参数
参数描述
MRF5S19060NR1_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19090HR3 功能描述:MOSFET RF N-CHAN 28V 18W NI-780 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF5S19090HR5 功能描述:MOSFET RF N-CHAN 28V 18W NI-780 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF5S19090HSR3 功能描述:MOSFET RF N-CHAN 28V 18W NI-780S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF5S19090HSR5 功能描述:MOSFET RF N-CHAN 28V 18W NI-780S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR