参数资料
型号: MRF5S19060NR1
厂商: MOTOROLA INC
元件分类: 功率晶体管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
封装: PLASTIC, CASE 1486-03, 4 PIN
文件页数: 11/12页
文件大小: 401K
代理商: MRF5S19060NR1
MRF5S19060NR1 MRF5S19060NBR1
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
210
109
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than
±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
108
107
106
120
140
160
180
200
MTTF
FACT
OR
(HOURS
X
AMPS
2 )
100 110
130
150
170
190
TYPICAL CHARACTERISTICS
N-CDMA TEST SIGNAL
10
0.0001
100
0
PEAK TO AVERAGE (dB)
Figure 13. CCDF N-CDMA
10
1
0.1
0.01
0.001
24
68
f, FREQUENCY (MHz)
100
0
Figure 14. 2-Carrier N-CDMA Spectrum
10
20
30
40
50
60
70
80
90
ACPR @ 30 kHz
Integrated BW
+ACPR @ 30 kHz
Integrated BW
IM3 @
1.2288 MHz
Integrated BW
+IM3 @
1.2288 MHz
Integrated BW
1.2288 MHz
Channel BW
6
1.5
4.5
3
0
1.5
3
4.5
6
7.5
(dB)
IS 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth Carrier,
Adjacent Channels Measured over a 30 kHz
Bandwidth at f1 885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at
f1 2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @
0.01% Probability on CCDF.
PROBABILITY
(%)
相关PDF资料
PDF描述
MRF5S19060NBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF5S19060NR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF5S19060NBR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF5S19090HSR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5S19090LSR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
相关代理商/技术参数
参数描述
MRF5S19060NR1_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19090HR3 功能描述:MOSFET RF N-CHAN 28V 18W NI-780 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF5S19090HR5 功能描述:MOSFET RF N-CHAN 28V 18W NI-780 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF5S19090HSR3 功能描述:MOSFET RF N-CHAN 28V 18W NI-780S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF5S19090HSR5 功能描述:MOSFET RF N-CHAN 28V 18W NI-780S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR