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参数资料
| 型号： | MRF5P20180HR6 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件页数： | 10/12页 |
| 文件大小： | 397K |
| 代理商： | MRF5P20180HR6 |
MRF5P20180HR6
RF Device Data
Freescale Semiconductor
Zo = 25 Ω
Zload
f = 1990 MHz
f = 1930 MHz
Zsource
f = 1990 MHz
f = 1930 MHz
Figure 12. Series Equivalent Source and Load Impedance
f
MHz
Zsource
Ω
Zload
Ω
1930
1960
1990
6.54 - j16.04
13.88 - j20.46
9.70 - j17.92
4.06 - j5.56
3.70 - j5.48
3.64 - j5.76
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
VDD = 28 V, IDQ = 1600 mA, Pout = 38 W Avg.
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
+
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5P20180HR6_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF5P20180R6 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF5P21045NR1 | 功能描述:射频MOSFET电源晶体管 HV5 2170MHZ 10W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5P21180 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF5P21180HR5 | 功能描述:射频MOSFET电源晶体管 HV5 38W WCDMA NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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