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参数资料
| 型号： | MRF377R5 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 5 PIN |
| 文件页数： | 3/11页 |
| 文件大小： | 804K |
| 代理商： | MRF377R5 |
5-82
Freescale Semiconductor
Wireless RF Product Device Data
MRF377 MRF377R3 MRF377R5
6.57 - j4.03
660
Figure 19. 470—860 MHz Broadband Series Equivalent Source and Load Impedance
f
MHz
Zsource
Zload
470
560
5.79 - j2.40
6.63 - j2.63
6.21 - j1.69
5.66 - j1.12
6.76 - j1.00
Optimized for VDD = 32 V, IDQ = 2 x 1000 mA, Pout = 45 W Avg., DVBT OFDM
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Zsource
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
+
Zo = 10
f = 470 MHz
f = 860 MHz
f = 470 MHz
Zload
Zsource
760
860
5.34 - j6.28
6.67 - j4.55
6.57 - j1.91
7.37 - j5.45
Zo = 10
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF3866 | 功能描述:射频双极小信号晶体管 RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| MRF3866G | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| MRF3866R1 | 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF3866R2 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| MRF390 | 制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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