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参数资料
| 型号： | MRF377HR5 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN |
| 文件页数： | 10/16页 |
| 文件大小： | 812K |
| 代理商： | MRF377HR5 |
MRF377HR3 MRF377HR5
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Drain Efficiency
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
ηD
—
23.5
25.8
23.0
22.7
21.3
—
%
Adjacent Channel Power Ratio
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
ACPR
—
-59.3
-58.7
-58.1
—
dBc
Typical Performances (1) (In ATSC 8VSB Single-Channel, Broadband Fixture, 50 ohm system)
Common Source Power Gain
(VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
Gps
—
17.5
17.2
16.6
—
dB
Drain Efficiency
(VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
ηD
—
31.0
34.3
30.1
29.6
27.8
—
%
Intermodulation Distortion
(VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
IMD
—
31.7
32.7
32.9
34.2
35.4
—
dBc
1. Measurement made with device in push-pull configuration.
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相关代理商/技术参数 |
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|---|---|
| MRF377R3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
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| MRF3866 | 功能描述:射频双极小信号晶体管 RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| MRF3866G | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| MRF3866R1 | 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
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